Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. S. AYUBI-MOAK"'
Autor:
L Schneider, Mayank Bahl, Robert Scarmozzino, Wei-Choon Ng, G Letay, J S Ayubi-Moak, Evan Heller
Publikováno v:
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Presented here are two important devices that cannot be modeled accurately and/or tractably by a single simulation technique. Simulation flows to address each device are presented. The first is a patterned Light Emitting Diode (LED), the optical mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398c84ba57f84ab3c52559f87c2751f5
https://doi.org/10.1109/nusod.2016.7547050
https://doi.org/10.1109/nusod.2016.7547050
Autor:
Karol Kalna, J. S. Ayubi-Moak
Publikováno v:
2012 15th International Workshop on Computational Electronics.
A performance of two n-type III-V MOSFET based on an In 0.3 Ga 0.7 As channel architecture: a surface channel design with implanted source/drain contacts and a δ-doped, implant-free design, is compared when scaled to gate lengths of 35 nm, 25 nm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69adda16d30138b2c1ebb1941c0a0d4b
https://doi.org/10.1109/iwce.2012.6242838
https://doi.org/10.1109/iwce.2012.6242838
Publikováno v:
2009 13th International Workshop on Computational Electronics.
In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9211ac8e464408ee8b0494ba1aa25102
https://doi.org/10.1109/iwce.2009.5091139
https://doi.org/10.1109/iwce.2009.5091139
Autor:
Stephen M. Goodnick, Marco Saraniti, J. S. Ayubi-Moak, David K. Ferry, Richard Akis, N. Faralli
Publikováno v:
2008 20th International Conference on Indium Phosphide and Related Materials.
Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4ea661d94a361ddba21ee78edb7549
https://doi.org/10.1109/iciprm.2008.4702917
https://doi.org/10.1109/iciprm.2008.4702917
Autor:
Stephen M. Goodnick, Marco Saraniti, N. Faralli, Richard Akis, J. S. Ayubi-Moak, David K. Ferry
Publikováno v:
Journal of Physics: Condensed Matter. 20:384201
High electron mobility transistors (HEMTs) have become important for high frequency and low noise applications. There are devices now operating with a cutoff frequency, f(T), of several 100 GHz. Through simulation, we have been investigating how thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::612b081f97ac7dd9c7bca1bfe629ecb3
https://doi.org/10.1088/0953-8984/20/38/384201
https://doi.org/10.1088/0953-8984/20/38/384201