Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J. Richard Ayres"'
Autor:
Wen-Sheng Chang, Nigel D. Young, Kakkad Ramesh, Fumirou Matsuki, Keiichi Sano, Fu-Yuan Hsueh, Martin John Edwards, J. Richard Ayres, Kazuyuki Hashimoto
Publikováno v:
IEICE Transactions on Electronics. :1583-1589
Ambient light sensors have been used to reduce power consumption of Active Matrix Liquid Crystal Displays (AMLCD) adjusting display brightness depending on ambient illumination. Discrete sensors have been commonly used for this purpose. They make mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5614ff5096aa8e89b27553a5f4ebbd33
https://doi.org/10.1587/transele.e93.c.1583
https://doi.org/10.1587/transele.e93.c.1583
Autor:
Fumirou Matsuki, Keiichi Sano, Martin John Edwards, David Yeates, J. Richard Ayres, Andrew Steer, Kazuyuki Hashimoto
Publikováno v:
SID Symposium Digest of Technical Papers. 38:290-293
Sensing ambient light in mobile applications allows reduced power consumption through backlight control. Integration of light sensors reduces module complexity and location of the sensors close to the pixel array simplifies integration in products. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d7fc1b109200a731c78b065b1461b48
https://doi.org/10.1889/1.2785287
https://doi.org/10.1889/1.2785287
Autor:
Keitaro Yamashita, Keiichi Sano, Kazuyuki Hashimoto, J. Richard Ayres, Fumirou Matsuki, Wei-Cheng Lin, Martin John Edwards
Publikováno v:
SID Symposium Digest of Technical Papers. 38:280-283
A 222 dpi LTPS AMLCD with integrated 8-bit DACs for reduced system cost is described. The architecture is based on a 2-stage resistor-capacitor DAC with a 2-way interleaved architecture that is well suited to high-resolution LTPS displays. We have co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28cf532960381b1fa58df157905fdf40
https://doi.org/10.1889/1.2785284
https://doi.org/10.1889/1.2785284
Publikováno v:
Japanese Journal of Applied Physics. 37:1801
Hot carrier instabilities in poly-Si thin film transistors (TFTs) are caused by high electric fields at the drain. These high fields are determined mainly by the abruptness of the lateral n+ doping profile in the drain and the two-dimensional (2D) co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::783cb57fb7a9cdfcba30054d3bbdb7e9
https://doi.org/10.1143/jjap.37.1801
https://doi.org/10.1143/jjap.37.1801
Autor:
Fabio Massussi, Luigi Mariucci, Stanley D. Brotherton, Alessandro Pecora, J. Richard Ayres, Guglielmo Fortunato
Publikováno v:
Scopus-Elsevier
Polycrystalline silicon (polysilicon) thin film transistor (TFT) technology is emerging as a key technology for active matix liquid crystal displays, allowing the integration of both active matrix and driving circuitry on the same substrate. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af3337d7a74514659056739fd2eeb828
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032638893&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032638893&partnerID=MN8TOARS
