Zobrazeno 1 - 10
of 34
pro vyhledávání: '"J. Randall Creighton"'
Publikováno v:
Journal of Crystal Growth. 464:132-137
Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c4ff57e3684c220ab7885023cc6837
https://doi.org/10.1016/j.jcrysgro.2016.11.063
https://doi.org/10.1016/j.jcrysgro.2016.11.063
Publikováno v:
The Journal of Physical Chemistry C. 116:1139-1144
We have searched for chemicurrent generation in Pt/GaN nanodiodes during catalytic CO oxidation and observe a reaction-induced current that scales with reaction rate. But after considering (1) how the reaction-induced current depends on diode shunt r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6023ac2eb40b81dd0cbbd55254264a
https://doi.org/10.1021/jp210492k
https://doi.org/10.1021/jp210492k
Publikováno v:
Advanced Materials. 21:2416-2420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08b6f28a85cb1046dcbc8ab6f81113b
https://doi.org/10.1002/adma.200802532
https://doi.org/10.1002/adma.200802532
Publikováno v:
Journal of Crystal Growth. 310:3706-3709
We report a route to highly aligned, vertical arrays of GaN nanowires in which the degree of vertical alignment is improved via collisions between nanowires during growth. An investigation of the initial growth process indicates that in addition to v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bdadef2fe7cec82cca56ef7f8912d3f
https://doi.org/10.1016/j.jcrysgro.2008.05.026
https://doi.org/10.1016/j.jcrysgro.2008.05.026
Chemical kinetics and mass transport effects in solution-based selective-area growth of ZnO nanorods
Autor:
Michael E. Coltrin, Neil C. Simmons, David Scrymgeour, J. Randall Creighton, Carolyn M. Matzke, Julia W. P. Hsu
Publikováno v:
Journal of Crystal Growth. 310:584-593
We present a combined experimental and modeling study of the dependence of solution-based zinc oxide (ZnO) selective-area growth rates on pattern dimension. Selective growth is achieved by patterning a portion of the substrate with an organic templat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0213a229c9ddf427bc6ae8b91e1d1d30
https://doi.org/10.1016/j.jcrysgro.2007.11.030
https://doi.org/10.1016/j.jcrysgro.2007.11.030
Publikováno v:
Journal of Crystal Growth. 298:2-7
We have used a combination of experiments, reactor modeling, and quantum chemical calculations to investigate parasitic chemical reactions that occur during AlGaInN MOVPE. Our results indicate that the parasitic chemical reactions occur in the bounda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca93deb17c07204790a4c8e55ed166b6
https://doi.org/10.1016/j.jcrysgro.2006.10.060
https://doi.org/10.1016/j.jcrysgro.2006.10.060
Publikováno v:
Journal of Crystal Growth. 287:566-571
Growth rates for organometallic vapor-phase epitaxy of GaN and AlGaN were measured over a wide range of reactor conditions. Non-ideality in growth rates and alloy composition are clear indications of parasitic chemical reactions. These parasitic reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81bb563ff560d07f8b65b6430147fc74
https://doi.org/10.1016/j.jcrysgro.2005.10.077
https://doi.org/10.1016/j.jcrysgro.2005.10.077
Autor:
George T. Wang, J. Randall Creighton
Publikováno v:
The Journal of Physical Chemistry A. 109:10554-10562
We have used infrared spectroscopy to investigate the decomposition of the gas-phase (Me)(3)M:NH(3) (M = Al, Ga, In) adducts from room temperature to 573 K, at reactant concentrations in the nominal range used for Al(Ga,In)N metal organic chemical va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72589d56a8d686e1b91f6a7d3672b7c6
https://doi.org/10.1021/jp054380s
https://doi.org/10.1021/jp054380s
Autor:
J. Randall Creighton, George T. Wang
Publikováno v:
The Journal of Physical Chemistry A. 108:4873-4877
Magnesocene (biscyclopentadienylmagnesium) is a common precursor used for the p-type doping of GaN and other group III nitride materials. Unfortunately, difficulties remain with predictably controlling the incorporation of Mg during metal organic che
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce98599600c21d24470a2a5e3588b895
https://doi.org/10.1021/jp036494e
https://doi.org/10.1021/jp036494e
Publikováno v:
Journal of Crystal Growth. 261:204-213
Using in situ laser light scattering, we have observed gas-phase nanoparticles formed during AlN, GaN and InN OMVPE. The response of the scattering intensity to a wide range of conditions indicates that the AlN parasitic chemistry is considerably dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb843980aebf6254089a8c8667be5a2
https://doi.org/10.1016/j.jcrysgro.2003.11.074
https://doi.org/10.1016/j.jcrysgro.2003.11.074