Zobrazeno 1 - 10
of 68
pro vyhledávání: '"J. R. Waldrop"'
Publikováno v:
Acta Materialia. 48:4471-4474
Interfaces of Al2O3 (sapphire) and LaPO4 (La-monazite) have been separated by fracture to reveal boundary grooving effects analogous to surface grooves that develop at high temperature on a polycrystalline body wherever a grain boundary intersects th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5677e6f8500ac87d40fcd33fdd8d05
https://doi.org/10.1016/s1359-6454(00)00233-0
https://doi.org/10.1016/s1359-6454(00)00233-0
Publikováno v:
Journal of Applied Physics. 72:4757-4760
Formation of Schottky barrier contacts to n‐type 6H‐SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad178fa800fdb7514797d3aede5784ea
https://doi.org/10.1063/1.352086
https://doi.org/10.1063/1.352086
Publikováno v:
Journal of Applied Physics. 69:372-378
X‐ray photoemission spectroscopy (XPS) has been used to measure the valence‐band offset ΔEv for the lattice‐matched InP/ In0.53Ga0.47As and In0.53Ga0.47As/ In0.52Al0.48As heterojunction interfaces. The heterojunctions were formed by molecular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b508e68fbe3c97a44ebbda8045ec7c5
https://doi.org/10.1063/1.347724
https://doi.org/10.1063/1.347724
Autor:
M. W. Kendig, J. R. Waldrop
Publikováno v:
Journal of The Electrochemical Society. 145:L11-L13
Atomic force microscopy is used to characterize the nucleation and beginning growth of chromate conversion coating on polished Al 2024-T3 alloy surfaces. Rapid nucleation occurs at different rates on the Al matrix and on two distinct intermetallic ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cce190d01f95176de5744ac0cd93e66
https://doi.org/10.1149/1.1838199
https://doi.org/10.1149/1.1838199
Autor:
J. Bergman, J. R. Waldrop, H. Yang, Michael E. Flatté, M. Zhong, C. H. Grein, M. Weimer, G. Sullivan, K. Mahalingam, Amal Ikhlassi, R. E. DeWames
Publikováno v:
SPIE Proceedings.
InAs-GaSb strained layer superlattices (SLSs) form a narrow band gap material whose cut-off wavelength can be tuned from 3 um to beyond 30 um. Theory predicts that in the LWIR and VLWIR, the SLS narrow bandgap layer structures can be engineered to re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52dcab55a510173095d80bad7dace456
https://doi.org/10.1117/12.607360
https://doi.org/10.1117/12.607360
Autor:
R. W. Grant, J. R. Waldrop
Publikováno v:
Applied Physics Letters. 68:2879-2881
X‐ray photoemission spectroscopy has been used to measure the valence band offset ΔEv for the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6H–SiC (0001) substrates. A nested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7309355fff396c46412bae4c513eda65
https://doi.org/10.1063/1.116355
https://doi.org/10.1063/1.116355
Autor:
J. R. Waldrop
Publikováno v:
Journal of Applied Physics. 75:4548-4550
A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p‐type Si‐face (0001) and C‐face (0001) 6H‐SiC by using x‐ray photoemission spectroscopy is reported. The Schottky barrier height φB ranges from 1.17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0eda309a1ef0acd4fc1a24f8fd6546
https://doi.org/10.1063/1.355948
https://doi.org/10.1063/1.355948
Autor:
R. W. Grant, J. R. Waldrop
Publikováno v:
Applied Physics Letters. 62:2685-2687
The electrical properties and interface chemistry of unannealed and annealed Ni, Ti, and Al contacts to both Si (0001) and C (0001) terminated faces of 6H‐SiC are compared by using x‐ray photoemission spectroscopy, current‐voltage, and capacita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ac62699763d62ce11246b50bb62906
https://doi.org/10.1063/1.109257
https://doi.org/10.1063/1.109257
Autor:
J. R. Waldrop, R. W. Grant
Publikováno v:
Applied Physics Letters. 56:557-559
Formation of Schottky barrier contacts to n‐type β‐SiC(100) was systematically investigated for several metals with various physical and chemical properties. The metals (Pd, Au, Co, Ti, Ag, Tb, and Al) were deposited onto oxygen terminated (∼1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c7213924ae5d73ecf6d100c398b3b34
https://doi.org/10.1063/1.102744
https://doi.org/10.1063/1.102744
Autor:
J. R. Waldrop
Publikováno v:
Perspectives in Condensed Matter Physics ISBN: 9789401067805
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb0869ac4ae4f35b32a16d5281f8f2a
https://doi.org/10.1007/978-94-009-0657-0_24
https://doi.org/10.1007/978-94-009-0657-0_24
