Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing

Autor: B. Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, T. Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, W. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, C. Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, J. Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young

Publikováno v: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::226c1fc04b9265eb60d875c5c1f4a89c
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830194

Direct-Bandgap Germanium Active Layers Pumped Above Transparency Based on Tensilely Strained Nanomembranes

Autor: C. Boztug, F. Chen, J. R. Sanchez-Perez, F. F. Sudradjat, D. M. Paskiewicz, R. B. Jacobson, M. G. Lagally, R. Paiella

Publikováno v: CLEO:2011 - Laser Applications to Photonic Applications.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d0f3a570b0caf99b2e9c780dbc9a5101
https://doi.org/10.1364/cleo_si.2011.pdpa2