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Autor:
J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden, F. J. Heremans
Publikováno v:
Journal of Vacuum Science & Technology A. 41
A new approach to atomic layer etching (ALE) has been demonstrated, and its application to 4H-SiC is reported here. By pulsing only the DC bias for an Ar/Cl2 inductively coupled plasma-reactive ion etching system, the etch cycle duration is reduced b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84c7857b82e9c6b3fe511fb12be4cfd
https://doi.org/10.1116/6.0002447
https://doi.org/10.1116/6.0002447
