Zobrazeno 1 - 10
of 54
pro vyhledávání: '"J. R. Niklas"'
Publikováno v:
Materials Science and Engineering: B. :29-32
Further evidence was found that the 0.8 eV luminescence band in GaAs is correlated to the EL6 defect as identified by photo induced current transient spectroscopy (PICTS). From luminescence topography arguments are put forward that the EL6 defect sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f75b409a611517cbfc25e2153b91c1f8
https://doi.org/10.1016/s0921-5107(01)00959-x
https://doi.org/10.1016/s0921-5107(01)00959-x
Publikováno v:
Materials Science and Engineering: B. :371-375
Non-destructive and spatially resolved (35 μm) characterisation methods for high resistivity GaAs and epitaxial substrates are presented. Microwave detected photo induced current transient spectroscopy (PICTS) is a further development of the already
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2b90de91321f4262af93a9be9585361
https://doi.org/10.1016/s0921-5107(01)01073-x
https://doi.org/10.1016/s0921-5107(01)01073-x
Publikováno v:
Physica B: Condensed Matter. :745-748
Among the intrinsic defects in GaAs the EL6 gains more attention due to its properties as a non-radiative recombination centre. Also, for an efficient defect engineering its atomistic structure becomes an important question. There are many suggestion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3defe236ee45db4e9cc30ed8d9fb93ab
https://doi.org/10.1016/s0921-4526(01)00799-2
https://doi.org/10.1016/s0921-4526(01)00799-2
Publikováno v:
Physica B: Condensed Matter. :800-803
Cu diffusion into semi-insulating GaAs was performed at 1150°C. The PICTS spectra of the diffused GaAs show several Cu-related peaks. The height of the characteristic low-temperature peak (CuA, T≈150 K) is proportional to the total Cu concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e2f6824d6429985141ea73a6d78998
https://doi.org/10.1016/s0921-4526(01)00807-9
https://doi.org/10.1016/s0921-4526(01)00807-9
Publikováno v:
Semiconductor Science and Technology. 15:1039-1044
In the understanding of properties of deep levels in undoped bulk GaAs there are still considerable deficiencies and obscurities. One example is the activation energy of the electron level EL6, which is present in undoped bulk GaAs mostly in a relati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd3c3a14f7de87f9d3b4a1347cbad26
https://doi.org/10.1088/0268-1242/15/11/305
https://doi.org/10.1088/0268-1242/15/11/305
Publikováno v:
Semiconductor Science and Technology. 11:851-857
A point-contact technique operating at low forward bias was used for high-resolution profiling of semi-insulating GaAs and InP as well as of medium-resistivity undoped n-type GaAs. Electrical mesoscopic non-uniformities strongly correlated to the cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8acec5ca9ed3f8da09ab201d8b4e8df1
https://doi.org/10.1088/0268-1242/11/6/002
https://doi.org/10.1088/0268-1242/11/6/002
Autor:
R Voszka, J.-M. Spaeth, G.J. Edwards, A. Watterich, O.R. Gilliam, J R Niklas, S Greulich-Weber, Ralph H. Bartram
Publikováno v:
Journal of Physics: Condensed Matter. 7:3013-3022
An ESR study of vanadium-doped paratellurite indicates that vanadium enters the lattice as V4+, equally populating the four inequivalent cation sites. The 3d1 electron exhibits hyperfine interaction with the I=7/2 51V nucleus and superhyperfine inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627efc91865b4f4ae575020adf0d31f1
https://doi.org/10.1088/0953-8984/7/15/008
https://doi.org/10.1088/0953-8984/7/15/008
Publikováno v:
Materials Science Forum. :247-252
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a199f31e9768add9f60c90b7badb97fe
https://doi.org/10.4028/www.scientific.net/msf.65-66.247
https://doi.org/10.4028/www.scientific.net/msf.65-66.247
Autor:
O.R. Gilliam, A Watterich, L.A. Kappers, R Voszka, J.-M. Spaeth, J R Niklas, Gábor Corradi, I. Földvári
Publikováno v:
Journal of Physics: Condensed Matter. 2:4325-4339
In undoped paratellurite ( alpha -TeO2) electron-irradiated near room temperature, in addition to the VO. centre, two further intrinsic, strongly anisotropic radiation defects have been characterised using ESR and ENDOR spectroscopy. The first new ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08910b535958aa54a3efad96f8faddd
https://doi.org/10.1088/0953-8984/2/19/002
https://doi.org/10.1088/0953-8984/2/19/002
Publikováno v:
Applied Physics Letters. 69:1767-1769
The diffusion of copper in semi‐insulating liquid‐encapsulated‐Czochralski‐grown gallium arsenide at 800 °C was examined by photoluminescence, photoetching, secondary ion mass spectroscopy, and temperature dependent Hall measurements. A diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf6df31c74afe6b6fcebe87909e27455
https://doi.org/10.1063/1.117479
https://doi.org/10.1063/1.117479