Zobrazeno 1 - 10
of 213
pro vyhledávání: '"J. R. Leite"'
Publikováno v:
Brazilian Journal of Biology, Vol 82 (2021)
Externí odkaz:
https://doaj.org/article/3fe022badbd842d298ea948137a859aa
Publikováno v:
Brazilian Journal of Biology, Vol 76, Iss 3, Pp 743-749
Abstract Many aspects of sex change in reef fishes have been studied, including behavior and social organization. However, gonad histology remains the most robust way to identify sexual patterns in fishes. Some uncommon tissues remain poorly describe
Externí odkaz:
https://doaj.org/article/b4abe892fc674bc8a2ac4d054402d4cd
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
The dispersion of the thermotolerant coliform plumes emitted from the Araca, Itaquanduba and Cigarras domestic sewage submarine outfalls in the Sao Sebastiao Channel was modeled. The plumes were simulated as the only pollution sources considering bac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86344e5978c2a5c3bc0566fe83dada91
https://doi.org/10.1016/j.rsma.2021.101647
https://doi.org/10.1016/j.rsma.2021.101647
The robot manipulator is an equipment that stands out for two reasons: Firstly because of its characteristics of movement and reprogramming, resembling the arm; secondly, by adding several areas of knowledge of science and engineering. The present wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1585ea4c2fb181f72dee79a83a95750
Autor:
L S, Bueno, A A, Bertoncini, C C, Koenig, F C, Coleman, M O, Freitas, J R, Leite, T F, De Souza, M, Hostim-Silva
Publikováno v:
Journal of fish biology. 89(1)
In this study, seasonal numerical abundance of the critically endangered Atlantic goliath grouper Epinephelus itajara was estimated by conducting scuba dive surveys and calculating sightings-per-unit-effort (SPUE) at three sites in southern Brazil. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a0aed629f518bf51c95b115e83cbd27e
https://pubmed.ncbi.nlm.nih.gov/27264779
https://pubmed.ncbi.nlm.nih.gov/27264779
Publikováno v:
International Journal of Quantum Chemistry. 36:693-699
The Green's function technique within the framework of a valence-force-field Hamiltonian has been used to study the vibrational properties of the donor–hydrogen complexes, for the donors P, As, and Sb in silicon. The A1 and E vibrational energies o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a66c628740680262cac8874c930799
https://doi.org/10.1002/qua.560360871
https://doi.org/10.1002/qua.560360871
Autor:
Klaus Lischka, J. R. Leite, Fernando Cerdeira, S. Li, E. A. Meneses, D.G. Pacheco-Salazar, Donat Josef As
Publikováno v:
Semiconductor Science and Technology. 21:846-851
In this work we report optical experiments on pseudomorphic cubic InxGa1−xN epilayers grown on cubic GaN/3C-SiC templates. We make a detailed study of photoluminescence (PL) and photoluminescence excitation spectroscopy on these samples, with spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d515211d691386e4e3c978d8b7dbaaf9
https://doi.org/10.1088/0268-1242/21/7/003
https://doi.org/10.1088/0268-1242/21/7/003
Autor:
Klaus Lischka, Luisa Maria Ribeiro Scolfaro, J. R. Leite, D.G. Pacheco-Salazar, E. A. Meneses, Donat Josef As, Fernando Cerdeira, S. Li
Publikováno v:
Journal of Crystal Growth. 284:379-387
We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7847bc29275c166f6b40a0319a865f06
https://doi.org/10.1016/j.jcrysgro.2005.07.049
https://doi.org/10.1016/j.jcrysgro.2005.07.049
Publikováno v:
Journal of Crystal Growth. 278:103-107
Uncapped InAs/GaAs quantum dots with an average height of 14 nm were obtained combining a low growth rate (0.01 ML/s) and a high substrate temperature (520 °C) during molecular beam epitaxy of InAs on GaAs(0 0 1). This achievement of a very narrow d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90fbbc30d868178ff0440432afa7b2e4
https://doi.org/10.1016/j.jcrysgro.2004.12.118
https://doi.org/10.1016/j.jcrysgro.2004.12.118