Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. R. LaRoche"'
Publikováno v:
ECS Transactions. 50:1039-1045
Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48331d9e9dc7c7302a10b35022940df
https://doi.org/10.1149/05009.1039ecst
https://doi.org/10.1149/05009.1039ecst
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything and circuits based on other materials systems are required. What is the best way to integrate these dissimilar materials and enhance the capab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07d79223beb2b068b62b0de1d3fc504
https://doi.org/10.1109/csics.2013.6659239
https://doi.org/10.1109/csics.2013.6659239
Autor:
J. Bergman, Nicolas Daval, J. R. LaRoche, Smith David E A, Robin. F. Thompson, Mayank T. Bulsara, Ying Wu, Bobby Brar, Charlotte Drazek, Amy W. K. Liu, Lamine Benaissa, Thomas E. Kazior, Wonill Ha, Andrew Synder, Emmanuel Augendre, Miguel Urteaga, Dmitri Lubyshev, Eugene A. Fitzgerald, Myung-Jun Choe, Joel M. Fastenau, W. E. Hoke, A. Torabi, D. T. Clark
Publikováno v:
MRS Proceedings. 1194
We report on a direct epitaxial growth approach for the heterogeneous integration of high speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBTs) structures were successfully grown on patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e48cc864b5d6555786644d57b9493b5
https://doi.org/10.1557/proc-1194-a09-01
https://doi.org/10.1557/proc-1194-a09-01