Zobrazeno 1 - 10
of 1 077
pro vyhledávání: '"J. R. Childress"'
Publikováno v:
IEEE Transactions on Magnetics. 59:1-5
Publikováno v:
IEEE Transactions on Magnetics. 58:1-4
Publikováno v:
APL Materials, Vol 2, Iss 4, Pp 046109-046109-7 (2014)
We present a study of Ar ion milling-induced damage in exchange biased IrMn/CoFe/Ag-based magnetic multilayer thin films. While process variations determine the change in CoFe magnetic properties, the distance from the ion milling front to the IrMn/C
Externí odkaz:
https://doaj.org/article/22e4ac08d3ca410f862fb32994a03849
Autor:
J. Mondaud, L. Cuchet, J. R. Childress, Nikolai A. Sobolev, Eduardo Alves, A. A. Timopheev, N. Caçoilo, B. M. S. Teixeira, Sérgio Ricardo Magalhães
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (45), pp.455003. ⟨10.1088/1361-6463/aba38c⟩
Journal of Physics D: Applied Physics, 2020, 53 (45), pp.455003. ⟨10.1088/1361-6463/aba38c⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (45), pp.455003. ⟨10.1088/1361-6463/aba38c⟩
Journal of Physics D: Applied Physics, 2020, 53 (45), pp.455003. ⟨10.1088/1361-6463/aba38c⟩
The impact of 400 keV Ar+ irradiation on the magnetic and electrical properties of in-plane magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic resonance, vibrating sample magnetometry and current-in-plane tunneling tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a45cf10eaaa03d30f97c618564c989e0
https://hal.archives-ouvertes.fr/hal-02917089
https://hal.archives-ouvertes.fr/hal-02917089
Autor:
L. Cuchet, N. Sobolev, A. A. Timopheev, S. Magalhães, J. Mondaud, N. Caçoilo, B. M. S. Teixeira, B. Dieny, R. Sousa, J. R. Childress, S. Auffret, E. Alves
Publikováno v:
Mathematical modeling in materials science of electronic component.
In this work, the effect of bombardment with high-energy ions on the parameters of magnetic tunnel junctions based on CoFeB / MgO, such as magnetic anisotropy, magnetoresistance, and the damping coefficient of magnetization precession, is investigate
Autor:
S.A. MacDonald, Bruce A. Gurney, Neil Smith, M.K. Ho, Ching Tsang, Matthew J. Carey, L.M. Ingall, Kashmira J. Carey, J. R. Childress, R.J. Wilson
Publikováno v:
IEEE Transactions on Magnetics. 37:1745-1748
Simple IrMn spin-valves are investigated for use in high density recording head sensors. Top-IrMn spin-valves of the form NiFeCr(40 /spl Aring/)/NiFe(32 /spl Aring/)/CoFe(5)/Cu(25 /spl Aring/)/CoFe(30 /spl Aring/)/IrMn(80 /spl Aring/)/Ta(50 /spl Arin
Publikováno v:
Journal of Applied Physics. 89:6579-6584
The exchange field decays when spin valves are subjected to a field that rotates the pinned layer towards the reverse direction. The decay results from a competition between the torque on the interfacial AF spins from the pinned layer, which lowers t
Autor:
H. Cho, D. Johnson, J. R. Childress, S. Onishi, K. B. Jung, S. J. Peartona, Y. D. Park, Jan-Chen Hong
Publikováno v:
Journal of The Electrochemical Society. 146:2163-2168
Maximum etch rates of ∼400 A min -1 were obtained for Ni 0.8 Fe 0.2 and Ni 0.8 Fe 0.13 Co 0.07 thin films in CO/NH 3 inductively coupled plasmas (ICP). There is a small chemical contribution to the etch mechanism (i.e., formation of metal carbonyls
Autor:
S. J. Pearton, S. Onishi, J. R. Childress, K. B. Jung, D. Johnson, H. Cho, J. Hong, Y. D. Park
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:535-539
The CO/NH3 plasma chemistry operated under conventional reactive ion etching conditions does not etch NiFe or NiFeCo. However, under high density plasma conditions, etch rates up to ∼500 A min−1 are obtained for both materials provided optimized
Publikováno v:
Journal of Applied Physics. 93:8570-8572
Ferromagnetic resonance (FMR) in the Co80Fe20/Ni80Fe20 free (sense) layer of micron-sized, magnetic tunnel junction (MTJ) devices is studied by two different techniques. The first method employs the MTJ device’s magnetoresistance, and measures ther