Zobrazeno 1 - 10
of 34
pro vyhledávání: '"J. R. CREIGHTON"'
Autor:
D. L. Alliman, Brendan P. Gunning, J. M. Kempisty, K. Ikenaga, A. Mishima, J. R. Creighton, Jeffrey J. Figiel, Daniel D. Koleske
Publikováno v:
Applied Physics Letters. 110:232102
Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3e07fea127373bd663f2ee22825b7ca
https://doi.org/10.1063/1.4984900
https://doi.org/10.1063/1.4984900
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 63:679-687
The effects which an iron(III) based smoke suppressing compound have on the thermal stability of some acrylonitrile–butadiene–styrene/chlorinated poly(vinyl chloride) (ABS/CPVC) polymer blends have been investigated. Thermogravimetric analysis (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cce20e492d7a0595312cad7e3be7af
https://doi.org/10.1023/a:1010127701663
https://doi.org/10.1023/a:1010127701663
Publikováno v:
Applied Physics Letters. 81:2626-2628
Using in situ laser light scattering, we have directly observed the formation of gas-phase nanoparticles during AlN, GaN, and AlGaN metalorganic vapor phase epitaxy. The nanoparticles are sharply distributed in height 6 mm from the surface, in good a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e269ece56e8c5bf98bfbd122e17b39
https://doi.org/10.1063/1.1510580
https://doi.org/10.1063/1.1510580
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:876-883
The use of trimethylgallium (TMGa) as the gallium source during epitaxial growth of GaAs often leads to high levels of carbon incorporation. Using temperature programmed desorption, high‐resolution electron energy loss spectroscopy (HREELS), and st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2830676587bb85ed1e43da5391f4d513
https://doi.org/10.1116/1.578320
https://doi.org/10.1116/1.578320
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:316-320
The adsorption and decomposition of trimethylgallium (TMGa) on the gallium rich (4×6) and (1×6) GaAs(100) surfaces have been studied by high resolution electron energy loss spectroscopy (HREELS), in conjunction with temperature‐programmed desorpt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49dfe704cb5043b5bc0c65d12c0f8ce1
https://doi.org/10.1116/1.578083
https://doi.org/10.1116/1.578083
Autor:
J. R. Creighton
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3984-3987
We have studied the chemisorption of atomic hydrogen and deuterium on gallium‐rich (4×6) and arsenic‐rich c(2×8) GaAs(100) reconstructed surfaces using temperature programmed desorption (TPD). Molecular hydrogen (specifically D2) desorption fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c21fc71102ec1e8da338510e9a9e7cd0
https://doi.org/10.1116/1.576433
https://doi.org/10.1116/1.576433
Publikováno v:
Inorganic Syntheses, Volume 23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d91b3c17d934a00ef79fa56bb70172
https://doi.org/10.1002/9780470132548.ch33
https://doi.org/10.1002/9780470132548.ch33
Publikováno v:
Applied Physics Letters. 60:977-979
We report spectroscopic evidence for the thermal and photochemical decomposition pathways of arsine (AsH3) adsorbed on Ga‐rich GaAs(100). Arsine adsorbs molecularly on the Ga‐rich GaAs surface at 120 K and dissociates upon either heating to above
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7371a99419cc3cc9a560f6ad516e987
https://doi.org/10.1063/1.106479
https://doi.org/10.1063/1.106479
Autor:
J. R. Creighton, B. A. Banse
Publikováno v:
Applied Physics Letters. 60:856-858
We report that arsine exposures between 100 and 350 °C will produce ‘‘super’’ As‐rich surfaces [arsenic coverages of up to ∼1.7 monolayers (ML, where 1 ML=6.26×1014 atoms cm−2)] of GaAs(100) that exhibit a c(4×4) low energy electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1417e57911f71b491a1a6f7e0a08938
https://doi.org/10.1063/1.106510
https://doi.org/10.1063/1.106510
Autor:
J. R Creighton, C. M. Truong
Publikováno v:
Microphysics of Surfaces Nanoscale Processing.
Atomic layer epitaxy (ALE) is a technique which, in principle, yields unparalleled deposition uniformity with precise (i.e. monolayer) thickness control. The technique has been used to deposit compound semiconductors, e.g. GaAs, although the success
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8719ab54401cc19026d45fe33deea07
https://doi.org/10.1364/msnp.1995.mthc1
https://doi.org/10.1364/msnp.1995.mthc1