Zobrazeno 1 - 10
of 13
pro vyhledávání: '"J. R. Brews"'
Publikováno v:
Microelectronic Engineering. 28:155-161
The variations in current induced by variations in the (horizontal) doping profile between channel and drain or source can be described in terms of variations in the effective channel length L EFF induced by the variations in the doping profile of so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4ca320226f9934db013aa2cacb4408
https://doi.org/10.1016/0167-9317(95)00035-7
https://doi.org/10.1016/0167-9317(95)00035-7
Publikováno v:
Journal of Vacuum Science and Technology. 13:1047-1055
Two frequently observed problems with Schottky diodes are soft current–voltage characteristics and low avalanche breakdown voltages. These problems are sometimes found immediately upon fabrication, or they may develop during use. It is proposed tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b47943b172de696a999937e92852051a
https://doi.org/10.1116/1.569058
https://doi.org/10.1116/1.569058
Autor:
J. R. Brews
Publikováno v:
Journal of Applied Physics. 46:2181-2192
A three‐dimensional perturbation‐theory treatment of the carrier‐density fluctuations in the insulated‐gate field‐effect transistor (IGFET) above threshold and their effect upon the source‐drain current is presented. The fluctuations are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c82b9702edfb47e6825ea693dbaa55f9
https://doi.org/10.1063/1.321863
https://doi.org/10.1063/1.321863
Autor:
J. R. Brews
Publikováno v:
Journal of Applied Physics. 46:2193-2203
The behavior of the inversion‐layer mobility observed in the IGFET at biases close to threshold is explained in terms of small fluctuations in the density of minority carriers. These fluctuations are in response to localized charges at the oxide‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3049ef14682582c05b610607d32b2e1b
https://doi.org/10.1063/1.321864
https://doi.org/10.1063/1.321864
Autor:
J. R. Brews
Publikováno v:
Journal of Applied Physics. 45:1276-1279
Minority carriers within the inversion layer of an inverted MOS capacitor can move in response to a high‐frequency ac signal even though the total minority‐carrier charge is fixed at the value set by the dc bias. In this paper a simple explicit f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ba59260c137e4a0f908772163eac4c
https://doi.org/10.1063/1.1663401
https://doi.org/10.1063/1.1663401
Autor:
J. R. Brews
Publikováno v:
Journal of Applied Physics. 44:3228-3231
It is shown that the apparent doping profile obtained from a 1/CHF2 vs V plot (where CHF is the high‐frequency MOS capacitance and V is the voltage across the capacitor) can be corrected for interface‐state effects to obtain a more accurate dopin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cd3f521b699c27552c0569cdacdb5ee
https://doi.org/10.1063/1.1662738
https://doi.org/10.1063/1.1662738
Autor:
J. R. Brews
Publikováno v:
Journal of Applied Physics. 43:2306-2313
Small‐signal conductance peaks in metal‐oxide‐semiconductor (MOS) devices have been found experimentally to be much wider than predicted by the surface‐state continuum model of Lehovec. This increased width has been attributed by Nicollian an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60930f92e08e54a3f7113a205ac87049
https://doi.org/10.1063/1.1661496
https://doi.org/10.1063/1.1661496
Autor:
J. R. Brews, C. J. Hwang
Publikováno v:
The Journal of Chemical Physics. 54:3263-3268
It is shown that the local relation EF = μ(n, T) + eΦ(x) relating the Fermi level EF, the chemical potential μ, and an electrostatic potential Φ(x), does not predict the correct dependence of the electron density, n, upon position, x, for every c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad017eb103c9f064b0e043a1b388fc00
https://doi.org/10.1063/1.1675338
https://doi.org/10.1063/1.1675338
Autor:
J. R. Brews
Publikováno v:
Journal of Applied Physics. 44:379-384
Carriers can be injected into the oxide of a metal‐oxide‐semiconductor (MOS) capacitor by illuminating either electrode with ultraviolet light. Once injected, a voltage across the capacitor will cause the injected carriers to flow, constituting a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85a582ac73a7820e5f2b3067c916679e
https://doi.org/10.1063/1.1661891
https://doi.org/10.1063/1.1661891
Autor:
J. R. Brews
Publikováno v:
Physical Review B. 6:3142-3145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44417d538e62ef66b0bc1f9c28071d82
https://doi.org/10.1103/physrevb.6.3142
https://doi.org/10.1103/physrevb.6.3142