Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. R. Bosnell"'
Publikováno v:
IEEE Transactions on Nuclear Science. 21:159-166
Electrical measurements are described of grown silicon dioxide thin films irradiated by gamma rays, X-rays and broadband VUV light. The dependence of radiation-sensitivity on processing variations, including annealing temperature, is compared for uni
Autor:
J. R. Bosnell, A. Myers
Publikováno v:
Philosophical Magazine. 13:1273-1282
The Fermi surface of zinc has been studied by means of quantum oscillations in the acoustic attenuation. Three long periods have been detected which correspond to the needle and monster regions and these have been interpreted on the nearly free elect
Autor:
J R Bosnell
Publikováno v:
Journal of Physics D: Applied Physics. 1:1389-1396
The thickness dependence of the ferromagnetic resonance linewidth for permalloy films evaporated in a vacuum of 1 μtorr is investigated and possible mechanisms for the origin of this damping are discussed. Results are presented describing the effect
Autor:
J. R. Bosnell, J. A. Savage
Publikováno v:
Journal of Materials Science. 7:1235-1243
Differential thermal analysis (DTA) and electron diffraction techniques have been used to characterize thin chalcogenide alloy films by comparison with the properties of bulk alloys from which they were deposited. It is shown that the DTA technique i
Autor:
C. B. Thomas, J. R. Bosnell
Publikováno v:
Philosophical Magazine. 27:665-681
A model for the first fire process and subsequent threshold switching action suggested by Thomas, Fray and Bosnell (1972), in both monostable and bistable glassy semiconducting diodes is further experimentally investigated in this communication. We h
Autor:
J R Bosnell, C B Thomas
Publikováno v:
Journal of Physics D: Applied Physics. 5:L29-L31
Switching behaviour, rather than dielectric breakdown, is believed to occur in the amorphous elements Si and Ge. We have found that the threshold voltage is dependent on the composition of the electrodes. We have suggested that this dependence is rel