Zobrazeno 1 - 10
of 103
pro vyhledávání: '"J. R. A. Cleaver"'
Publikováno v:
Microelectronic Engineering. :1063-1067
Procedures have been established for layout reconstruction of complete integrated circuits so that topology and function can be determined. Circuits are imaged repeatedly, after the removal of successive layers, by electron-beam and light-optical tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a17f43a2a788e88436c426d158ff4b9a
https://doi.org/10.1016/s0167-9317(02)00583-x
https://doi.org/10.1016/s0167-9317(02)00583-x
Publikováno v:
Physical Review Letters. 86:2150-2153
The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0311df08de9a0c1c8c6fc625a51121e4
https://doi.org/10.1103/physrevlett.86.2150
https://doi.org/10.1103/physrevlett.86.2150
Publikováno v:
Microelectronic Engineering. 53:641-644
Electron-beam techniques and sample-preparation methods have been established to meet the requirements for imaging of complete integrated circuits to determine the layout of each layer in the circuit and the layer-to-layer interconnections. Selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08b9c84d9ba115184ff0191b8b27ed7
https://doi.org/10.1016/s0167-9317(00)00395-6
https://doi.org/10.1016/s0167-9317(00)00395-6
Autor:
J. R. A. Cleaver, N. J. Collier
Publikováno v:
Microelectronic Engineering. :457-460
We apply the split-gate structure to dual-gate HEMTs, configured so that a parallel array of channels is defined by split gates that control the effective device width whilst a further continuous gate controls the carrier density within the channels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329abd25945651f40d1ccf7e02139586
https://doi.org/10.1016/s0167-9317(98)00106-3
https://doi.org/10.1016/s0167-9317(98)00106-3
Publikováno v:
Optical and Quantum Electronics. 28:875-896
An integrated optoelectronic circuit for ultrafast sampling of multi-terminal devices is described. This is achieved using optimized photoconductive switches fabricated from low-temperature-grown GaAs, monolithic integration of the device with the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63ff6e2669fe2db55849038a633eff0
https://doi.org/10.1007/bf00820154
https://doi.org/10.1007/bf00820154
Publikováno v:
Optical and Quantum Electronics. 28:907-917
In-plane-gate field-effect transistors are probed by femtosecond electrooptic sampling. Ultrafast response of the transistors is dominated by a displacement current induced by parasitic gate-drain capacitance. Intrinsic and parasitic gate-drain capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::153445d8a3a14a345a98281a85c7ac07
https://doi.org/10.1007/bf00820156
https://doi.org/10.1007/bf00820156
Publikováno v:
Applied Physics Letters. 85:3238-3240
Electrically pumped single-photon sources using semiconductor quantum dots are of interest as they can be integrated with other semiconductor devices, using standard processing techniques. In this letter, we report electroluminescence from single qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa5c9c272c8445c0cde6d9462740a0e
https://doi.org/10.1063/1.1803624
https://doi.org/10.1063/1.1803624
Publikováno v:
Sensors and Actuators A: Physical. 50:31-37
Copyright (c) 1996 Elsevier Science B.V. All rights reserved. Straight and chevron-shaped free-standing GaAs wires have been fabricated using an in situ process involving an electron-beam system with gas injection at the sample. Patterned electron-be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49099e935a5a14ea93396f076ca86d29
https://doi.org/10.1016/0924-4247(96)80082-3
https://doi.org/10.1016/0924-4247(96)80082-3
Publikováno v:
Journal of Applied Physics. 78:330-343
The magnetoresistance anomalies that are observed in multiprobe quantum wires (such as quenching of the Hall effect and negative bend resistance) have been investigated using a semiclassical billiard‐ball model that includes the effects of diffuse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::537e2bcd9dce283c64bac6f178a77853
https://doi.org/10.1063/1.360680
https://doi.org/10.1063/1.360680