Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J. Peter Krusius"'
Autor:
J. Peter Krusius, Udayan Ganguly
Publikováno v:
Thin Solid Films. 460:306-314
Some recent micro-optical applications require die planarity on the scale of a fraction of wavelength of light. A novel chemical mechanical polishing (CMP) process on a damascene structure is described for such requirements. We present an approach th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76052d989c1497585d4ffddca1944f16
https://doi.org/10.1016/j.tsf.2004.01.092
https://doi.org/10.1016/j.tsf.2004.01.092
Publikováno v:
Applied Physics Letters. 81:2238-2240
Junction formation by laser-induced lateral epitaxy was studied on a fully depleted silicon-on-insulator substrate (25–30 nm Si on 375 nm silicon dioxide). Selective laser melting of amorphous films with a 35 ns 308 nm XeCl laser pulse was characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414fcf488f3189a760f336de17d7f484
https://doi.org/10.1063/1.1507359
https://doi.org/10.1063/1.1507359
Publikováno v:
53rd Electronic Components and Technology Conference, 2003. Proceedings..
Novel high-density through-die connections from the front to the back of a silicon die are described. Single-diameter front-to-back through-die connections have previously been explored for various applications. The authors have explored a two-level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::633f751d4fb2def81e8b8fc2bb51730d
https://doi.org/10.1109/ectc.2003.1216345
https://doi.org/10.1109/ectc.2003.1216345
Publikováno v:
SPIE Proceedings.
Novel through-die front-to-back connections for MEMS applications are described. Large diameter (~100 μm diameter) front-to-back through-die connections have been studied previously for MEMS applications. Multi-level through-die hole structures are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4f146e25f65b25cc707445e9a7a9cd
https://doi.org/10.1117/12.472804
https://doi.org/10.1117/12.472804
Autor:
Sheldon M. Kugelmass, J. Peter Krusius
Publikováno v:
MRS Proceedings. 182
A low thermal budget process is demonstrated for the fabrication of submicron Boron doped polysilicon gate p-channel MOS devices with ultra thin gate insulators. All critical processing steps with temperatures above 700 °C, including gate oxide grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a260fe624d8a0f0d73608831975b35cc
https://doi.org/10.1557/proc-182-293
https://doi.org/10.1557/proc-182-293
Autor:
J. Peter Krusius, Udayan Ganguly
Publikováno v:
Journal of The Electrochemical Society. 151:H232
For some recent microoptic and microelectromechanical systems (MEMS) applications, metal structures are used as micromirror arrays, e.g., liquid-crystal-on-silicon (LCoS) microdisplays. The present paper reports a new approach to aluminum patterning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b63e1867ce3dd1223e8a82f07cdada9
https://doi.org/10.1149/1.1799432
https://doi.org/10.1149/1.1799432
Autor:
J. Peter Krusius
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 21:479-479
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906ca855ad86ed8bc1fa5a7edce655a8
https://doi.org/10.1109/tcpmb.1998.7102330
https://doi.org/10.1109/tcpmb.1998.7102330
Autor:
J. Peter Krusius
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 21:482-482
The following is a correction to the “List of Reviewers” printed on p. 204 of the May 1998 issue of IEEE's TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY-PART B: ADVANCED PACKAGING.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18affa442e1c275fde1059df9c9a1fd
https://doi.org/10.1109/tcpmb.1998.7102332
https://doi.org/10.1109/tcpmb.1998.7102332
Autor:
Asanga H. Perera, J. Peter Krusius
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1343
An electron beam lithography based fabrication technology using highly anisotropic reactive ion etching (RIE) has been developed for the fabrication of exploratory 200 nm metal–oxide semiconductor field effect transistors (MOSFETs), designed to ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8144fedf8516340487c06539c482063
https://doi.org/10.1116/1.584916
https://doi.org/10.1116/1.584916
Autor:
Irfan A. Saadat, J. Peter Krusius
Publikováno v:
Superlattices and Microstructures. 6:413-417
Channel charge control in multiple channel modulation doped FET devices (MODFET) is analyzed using one-dimensional self-consistent quantum mechanical theory. Schrodinger and Poisson equations are solved self-consistently for an arbitrary number of pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5cb96378f8aec79357b927d13d9301c
https://doi.org/10.1016/s0749-6036(89)80013-8
https://doi.org/10.1016/s0749-6036(89)80013-8