Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J. Perrin-Toinin"'
Autor:
Phromphong Pandee, J. Perrin Toinin, David C. Dunand, Chanun Suwanpreecha, Richard A. Michi, Chaowalit Limmaneevichitr
Publikováno v:
Acta Materialia. 164:334-346
Dilute Al Sc alloys ( Ni alloys (Al-6 wt.% Ni) derive their high strength at elevated temperature from Al3Ni microfibers formed during solidification. Here, we investigate ternary Al 6Ni-0.2Sc and Al 6Ni-0.4Sc alloys with both types of strengthening
Autor:
M. Bertoglio, J. Perrin Toinin, Marion Descoins, Dario Narducci, Lee Chow, Ting Luo, Alain Portavoce, Khalid Hoummada
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
Scripta Materialia, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
Scripta Materialia, Elsevier, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
Scripta Materialia, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of ~1.4 × 1020 cm−3, the resistivity of the PdGe contact is found to be tw
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors
Publikováno v:
Computational Materials Science
Computational Materials Science, Elsevier, 2016, 114, pp.23-32. ⟨10.1016/j.commatsci.2015.12.016⟩
Computational Materials Science, 2016, 114, pp.23-32. ⟨10.1016/j.commatsci.2015.12.016⟩
Computational Materials Science, Elsevier, 2016, 114, pp.23-32. ⟨10.1016/j.commatsci.2015.12.016⟩
Computational Materials Science, 2016, 114, pp.23-32. ⟨10.1016/j.commatsci.2015.12.016⟩
International audience; The influence of stress on the distribution of slow-diffusing substitutional impurities in the vicinity of a dislocation loop in Si and Ge bulk was theoretically investigated, at the atomic scale, using the Si and Ge Stillinge
Autor:
Lee Chow, Michael Texier, Yauheni Rudzevich, J. Perrin Toinin, Alain Portavoce, K. Hoummada, Sandrine Bernardini
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
The formation of voids on the surface of heavily implanted germanium has been known for more than 30 years. Recently there is a renewed interest in germanium due to its potential application in the complementary metal oxide semiconductor (CMOS) devic
Autor:
Marion Descoins, Alain Portavoce, Lee Chow, M. Bertoglio, R. Ma, S. Zhiou, Dario Narducci, J. Perrin Toinin, Khalid Hoummada
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2017, 139, pp.104-107. ⟨10.1016/j.scriptamat.2017.06.029⟩
Scripta Materialia, 2017, 139, pp.104-107. ⟨10.1016/j.scriptamat.2017.06.029⟩
Scripta Materialia, Elsevier, 2017, 139, pp.104-107. ⟨10.1016/j.scriptamat.2017.06.029⟩
Scripta Materialia, 2017, 139, pp.104-107. ⟨10.1016/j.scriptamat.2017.06.029⟩
International audience; PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cda10561a67c139ae79d3ccb844263de
https://hal-amu.archives-ouvertes.fr/hal-02385249
https://hal-amu.archives-ouvertes.fr/hal-02385249
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2017, 167 (SI), pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩
Microelectronic Engineering, Elsevier, 2017, 167, pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩
Microelectronic Engineering, 2017, 167 (SI), pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩
Microelectronic Engineering, Elsevier, 2017, 167 (SI), pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩
Microelectronic Engineering, Elsevier, 2017, 167, pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩
Microelectronic Engineering, 2017, 167 (SI), pp.52-57. ⟨10.1016/j.mee.2016.11.002⟩
International audience; The structure and the chemical composition of Pd germanides formed on Ge(100) were investigated using transmission electron microscopy (TEM), in-situ X-ray diffraction (XRD), and atom probe tomography (APT). An ultra thin Si f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d699eb22a4feb4e66949127b76e2d501
https://hal.archives-ouvertes.fr/hal-01694485
https://hal.archives-ouvertes.fr/hal-01694485
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2016, 122, pp.22-25. ⟨10.1016/j.scriptamat.2016.05.008⟩
Scripta Materialia, 2016, 122, pp.22-25. ⟨10.1016/j.scriptamat.2016.05.008⟩
Scripta Materialia, Elsevier, 2016, 122, pp.22-25. ⟨10.1016/j.scriptamat.2016.05.008⟩
Scripta Materialia, 2016, 122, pp.22-25. ⟨10.1016/j.scriptamat.2016.05.008⟩
International audience; Pd-Ge reactive-diffusion in two different samples Pd/Ge(001) and Pd/PdGe/Ge(001) was studied experimentally and theoretically, in order to clearly identify the driving force controlling the first-phase selection in the sequent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cc7a63fac86042825b1027a0cb4abfb
https://hal.archives-ouvertes.fr/hal-01435282
https://hal.archives-ouvertes.fr/hal-01435282
Autor:
Michael Texier, M. Bertoglio, Sandrine Bernardini, Alain Portavoce, K. Hoummada, J. Perrin Toinin, Lee Chow
Publikováno v:
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2016, 42 (2, SI), pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩
Materials Science in Semiconductor Processing, Elsevier, 2016, 42, pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩
Materials Science in Semiconductor Processing, 2016, 42 (2, SI), pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩
Materials Science in Semiconductor Processing, Elsevier, 2016, 42 (2, SI), pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩
Materials Science in Semiconductor Processing, Elsevier, 2016, 42, pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩
Materials Science in Semiconductor Processing, 2016, 42 (2, SI), pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩
E-MRS Spring Meeting 2015 Z entitled NanoMaterials and Processes for Advanced Semiconductor CMOS devices, Lille, FRANCE, MAY 11-14, 2015; International audience; 5 x 10(15) Te+ ions cm(-2) were implanted in an Ge(001) substrate using an industrial im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::968c188b93f160bf3d9102f28d5cf363
https://hal.archives-ouvertes.fr/hal-01435284
https://hal.archives-ouvertes.fr/hal-01435284