Zobrazeno 1 - 10
of 37
pro vyhledávání: '"J. Palacios Gomez"'
Autor:
I.J. Guerrero Moreno, R. Cisneros Tamayo, Georgiy Polupan, Tetyana Torchynska, J. Palacios Gomez
Publikováno v:
Journal of Luminescence. 149:1-6
Photoluminescence (PL), its temperature dependences and X-ray diffraction (XRD) have been investigated in MBE grown GaAs/Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As/InAlGaAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs). Studied QD structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::041ff596c142f43d4c993d650eaf7c16
https://doi.org/10.1016/j.jlumin.2013.12.053
https://doi.org/10.1016/j.jlumin.2013.12.053
Publikováno v:
Journal of Applied Crystallography. 43:38-41
In order to test the influence of extinction on texture measurements, pole figures of four copper samples were measured using neutron diffraction with three different wavelengths. The copper samples had previously been cold rolled to different extent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6c2fad67475b01e20deb2e971f5d6c
https://doi.org/10.1107/s0021889809047037
https://doi.org/10.1107/s0021889809047037
Publikováno v:
Acta Materialia. 52:3027-3034
The correction of pole density in the analysis of textured materials by means of an original X-ray diffraction technique is proposed. In the framework of the conventional model of mosaic crystals and the dynamic theory of X-ray diffraction, a method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62362f9dfeb6649dfc9ab606a85f2605
https://doi.org/10.1016/j.actamat.2004.03.005
https://doi.org/10.1016/j.actamat.2004.03.005
Autor:
A. Ita Torre, Tetyana Torchynska, H.A. Flores Gonzalez, Georgiy Polupan, F.G. Bacarril Espinoza, B. M. Bulakh, L. V. Scherbina, J. Palacios Gomez
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :235-241
The dependence of the photoluminescence (PL) and PL excitation spectra on the porous silicon top surface structure and the oxide composition on it has been investigated. Researches were carried out using the following methods: PL, PL excitation, elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1094e4b3766bc10a2ad0642459f5c96
https://doi.org/10.1016/s0368-2048(00)00379-0
https://doi.org/10.1016/s0368-2048(00)00379-0
Autor:
Tetyana Torchynska, F.G. Becerril Espinoza, Nadezhda E. Korsunskaya, Georgiy Polupan, L.Yu. Khomenkova, J. Palacios Gomez, A. García Bórquez
Publikováno v:
ResearcherID
Photoluminescence and photoluminescence excitation spectroscopies, scanning electron microscopy, and atomic force microscopy were used to study the photoluminescence mechanism in porous silicon. The dependences of photoluminescence parameters on elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4fe2d7278c3d040da79709240d4d24c
https://doi.org/10.1016/s0169-4332(00)00529-8
https://doi.org/10.1016/s0169-4332(00)00529-8
Publikováno v:
Thin Solid Films. 373:79-83
X-Ray diffraction and atomic force microscopy structural properties investigations of TiB 2 /GaAs device structures as-produced and annealed have been carried out. The samples were obtained by magnetron sputtering on Czochralski-grown (001) GaAs subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b358927fa5ac47482683cb0ea18508e4
https://doi.org/10.1016/s0040-6090(00)01099-3
https://doi.org/10.1016/s0040-6090(00)01099-3
Publikováno v:
Microelectronics Journal. 34:541-543
Photoluminescence (PL), transmission electron microscopy, Raman scattering spectra and extended X-ray absorption fine structure have been investigated in silicon oxide films enriched by Ge in as-grown state and after their thermal annealing at 800 °
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2551c2280fc0ce5272582b5bfb148e56
https://doi.org/10.1016/s0026-2692(03)00043-0
https://doi.org/10.1016/s0026-2692(03)00043-0
Autor:
A. De Ita de la Torre, A. Cadena Arenas, G. Gómez Gasga, Tetyana Kryshtab, Andriy Kryvko, J. Palacios Gomez
Publikováno v:
Scopus-Elsevier
X ray diffraction (XRD) is the common technique for texture analysis by means of pole figure (PF) measurement. PF reflects the grains orientation distribution but contains no information about grain microstructure. The reflected intensity can be affe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::723804f31b886695d2e26e8895c52f0b
https://doi.org/10.1557/proc-1276-24
https://doi.org/10.1557/proc-1276-24
Autor:
A. Ita-Torre, L.Yu. Khomenkova, Nadiia Korsunska, Tetyana Torchynska, L. V. Scherbina, J. Palacios Gomez, G. Bacarril-Espinosa, B. M. Bulakh
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
Photoluminescence and its excitation, Raman scattering, as well as Atomic Force Microscopy investigations were used to study the photoluminescence mechanism in P-Si. The dependencies of all characteristics on P-Si preparation regimes, the duration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951ef6056ee3da85eda582f868012245
https://doi.org/10.1109/asdam.2000.889517
https://doi.org/10.1109/asdam.2000.889517
Autor:
J. Palacios Gomez, E. Velázquez Lozada, Tetyana Torchynska, Ye S. Shcherbyna, A. Vivas Hernandez, G. Gómez Gasga, Georgiy Polupan
Publikováno v:
Journal of Physics: Conference Series. 245:012060
Photoluminescence (PL) and X ray diffraction have been studied in InAs quantum dots (QDs) embedded in symmetric In0.15Ga1-0.15As/GaAs quantum wells (dot-in-a-well, DWELL) with QDs grown at different temperatures. The density of QDs decreases from 1.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd54bbfb0688216621f5b24935769542
https://doi.org/10.1088/1742-6596/245/1/012060
https://doi.org/10.1088/1742-6596/245/1/012060