Zobrazeno 1 - 10
of 12
pro vyhledávání: '"J. P. Xanthakis"'
Autor:
G. Bertolini, O. Gürlü, R. Pröbsting, D. Westholm, J. Wei, U. Ramsperger, D. A. Zanin, H. Cabrera, D. Pescia, J. P. Xanthakis, M. Schnedler, R. E. Dunin-Borkowski
Publikováno v:
Royal Society Open Science, Vol 8, Iss 7 (2021)
In scanning field emission microscopy (SFEM), a tip (the source) is approached to few (or a few tens of) nanometres distance from a surface (the collector) and biased to field-emit electrons. In a previous study (Zanin et al. 2016 Proc. R. Soc. A 472
Externí odkaz:
https://doaj.org/article/5f560922e4c140fd9006b920568708bb
Autor:
M. S. Tsagarakis, J. P. Xanthakis
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105314-105314-6 (2019)
We have calculated the electrical characteristics of a vacuum transistor withsharp, pointed emitter and collector with a radius of curvature R
Externí odkaz:
https://doaj.org/article/67408e669d184a2581fd739526587519
Autor:
M. S. Tsagarakis, J. P. Xanthakis
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075012-075012-6 (2017)
We have examined the tunneling currents between CNTs dispersed in a dielectric matrix as is normally the case in a tensile stress or toxic gas sensors. Due to the randomness of the immersion process the CNTs are at random angles and configurations be
Externí odkaz:
https://doaj.org/article/6180d7fe28e443f59d7e263b5a5f9d87
Publikováno v:
Applied Physics Letters. 120:261601
We report a combined experimental and theoretical study of Gundlach resonances Un in scanning tunneling spectroscopy at constant current over an exceptional range of energy and number, typically tens of an eV and over thirty in order n. By performing
Publikováno v:
Journal of Physics: Condensed Matter. 9:2199-2209
We calculated the electronic structure of carbon-rich , an alloy for which there is conflicting experimental evidence for the degree of disorder and the fraction of graphitic carbon atoms present. Our calculation takes into account valence disorder d
Publikováno v:
2013 26th International Vacuum Nanoelectronics Conference (IVNC).
We have calculated the lateral distribution of field emitted electrons from a CNF array - a quantity of importance in designing field emission displays - by calculating the electron distribution from an individual CNF and subsequently summing the con
Publikováno v:
University of Helsinki
Recent experimental work [1] has shown that there is a simple scaling function for the current I in a sharp tunneling junction as a function of the tip anode distance d. When the emitter has a large radius of curvature R the tunneling potential depen
Autor:
J. P. Xanthakis, Andreas Kyritsakis
Publikováno v:
2013 26th International Vacuum Nanoelectronics Conference (IVNC).
It is well-known that for sharp emitters the traditional Fowler-Nordheim equation (FNE) is inadequate. In this paper we give a correction to the FNE. We include a second-order quadratic term to the potential and calculate numerically the Wentzel-Kram
Autor:
J P Xanthakis
Publikováno v:
Journal of Physics: Condensed Matter. 4:8573-8584
The author calculates the electronic structure of (GaAs)1-xGe2x, for which there are contradicting theories of the short-range structure. To investigate the latter he uses the cluster-Bethe-lattice method and the configuration-averaging technique of