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pro vyhledávání: '"J. P. Spratt"'
Publikováno v:
IEEE Transactions on Nuclear Science. 28:4275-4280
Autor:
G. C. Messenger, J. P. Spratt
Publikováno v:
Proceedings of the IRE. 46:1038-1044
The known effects of neutron irradiation upon majority and minority carrier properties of germanium and silicon are reviewed, and used as a basis to derive a theoretical expression for the dependence of grounded-emitter current gain of a transistor u