Zobrazeno 1 - 10
of 59
pro vyhledávání: '"J. P. Reithmaier"'
Autor:
G. Eisenstein, O. Karni, A. K. Mishra, A. Capua, D. Gready, V. V. Sichkovskyi, V. Ivanov, J. P. Reithmaier
Publikováno v:
IEEE Photonics Journal, Vol 7, Iss 3, Pp 1-7 (2015)
The dynamical properties of InP-based quantum dot (QD) gain media are surveyed and analyzed for three time scales ranging from tens of picoseconds to less than 200 fs, where quantum coherent phenomena are observable. Each of these time scales determi
Externí odkaz:
https://doaj.org/article/14ef1bc3debf47c0a07b85b5ccad765f
Autor:
I. Khanonkin, A. K. Mishra, O. Karni, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein
Publikováno v:
AIP Advances, Vol 7, Iss 3, Pp 035122-035122-7 (2017)
The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the conti
Externí odkaz:
https://doaj.org/article/4ddacbf0ba1e4ed39eed7d1096edecbe
Autor:
W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, A. Maryński, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Publikováno v:
AIP Advances, Vol 7, Iss 1, Pp 015117-015117-8 (2017)
We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are se
Externí odkaz:
https://doaj.org/article/de9a7889bfe14f0fbef82c2d92b8eb98
Autor:
N. Kumar, K. Panda, S. Dash, C. Popov, J. P. Reithmaier, B. K. Panigrahi, A. K. Tyagi, Baldev Raj
Publikováno v:
AIP Advances, Vol 2, Iss 3, Pp 032164-032164-14 (2012)
The dependence of the structural and morphological properties of nanocrystalline diamond films grown by hot filament chemical vapor deposition on the substrate temperature was studied. Friction coefficients of these films were measured and found to v
Externí odkaz:
https://doaj.org/article/f02084923bc348ddb306d393abfe33cf
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Publikováno v:
Journal of Applied Physics. 132:144301
Semiconductor nanostructures of various material systems are heavily researched for information processing applications as single-photon sources for communication and as a spin memory for storage. Here, exciton, electron, and hole properties in singl
Publikováno v:
Optics express. 28(14)
Quantum-dot-based semiconductor saturable absorber mirrors (SESAMs) with fast response times were developed by molecular beam epitaxy (MBE). Using quantum dots (QDs) in the absorber region of the SESAMs instead of quantum wells, enables additional de
Autor:
A, Abdollahinia, S, Banyoudeh, A, Rippien, F, Schnabel, O, Eyal, I, Cestier, I, Kalifa, E, Mentovich, G, Eisenstein, J P, Reithmaier
Publikováno v:
Optics express. 26(5)
Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit i
Autor:
J. P. Reithmaier, N. Mais, Gerd Bacher, B. Jobst, Alfred Forchel, D. Eisert, D. Hommel, G. Landwehr
Publikováno v:
Scopus-Elsevier
We have observed gain-coupled distributed feedback (DFB) laser emission from CdZnSe/(Zn,Mg)(S,Se) structures at room temperature. First order DFB gratings with periods in the 90 nm range were defined by maskless Ga + -implantation using a focused ion
Autor:
M. Syperek, P. Leszczyński, W. Rudno-Rudziński, G. Sęk, J. Andrzejewski, J. Misiewicz, E. M. Pavelescu, C. Gilfert, J. P. Reithmaier, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
The time‐resolved photoluminescence experiment has been used to examine temperature dependent dynamics in the quantum well‐quantum dots tunnel injection structures. The obtained pictures of the photoluminescence kinetics for the reference quantum