Zobrazeno 1 - 10
of 79
pro vyhledávání: '"J. P. Nougier"'
Autor:
J. F. Millithaler, Luca Varani, A. Moatadid, J. C. Vaissiere, J. P. Nougier, L. Hlou, Christophe Palermo, Khalid Amechnoue, J. Diyadi
Publikováno v:
Journal of Computational Electronics
Journal of Computational Electronics, Springer Verlag, 2007, 5 (4), pp.261-266. ⟨10.1007/s10825-006-0143-1⟩
Journal of Computational Electronics, Springer Verlag, 2007, 5 (4), pp.261-266. ⟨10.1007/s10825-006-0143-1⟩
International audience; We extend the iterative matrix method for the solution of the Boltzmann transport equation in multi-band semiconductors to the calculation of second order parameters such as correlation functions and the noise temperature. The
Autor:
V. Gruzhinskis, J. P. Nougier, Pavel Shiktorov, P. Gaubert, Luca Varani, E. Starikov, J. C. Vaissiere
Publikováno v:
VLSI Design, Vol 13, Iss 1-4, Pp 205-209 (2001)
VLSI Design
VLSI Design, Hindawi Publishing Corporation, 2001, 13 (1-4), pp.205-209. ⟨10.1155/2001/32838⟩
VLSI Design
VLSI Design, Hindawi Publishing Corporation, 2001, 13 (1-4), pp.205-209. ⟨10.1155/2001/32838⟩
The classical impedance field method is one of the most powerful techniques to calculate electronic noise in semiconductor structures. This method fails when applied to deep submicron devices due to the presence of spatial correlations between noise
Autor:
A. Matulionis, J. C. Vaissiere, J. Liberis, R. Katilius, R. Raguotis, L. Rota, Luca Varani, J. P. Nougier, Paulius Sakalas
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1999, 60 (16), pp.11487-11493. ⟨10.1103/PhysRevB.60.11487⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1999, 60 (16), pp.11487-11493. ⟨10.1103/PhysRevB.60.11487⟩
Experimental results on microwave noise in $n$-type GaAs $(n=3\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}3},$ 80 K) at electric fields below a few hundred $\mathrm{V}/\mathrm{c}\mathrm{m}$ are interpreted combini
Autor:
J. P. Nougier, Luca Reggiani, Daniel Pardo, Tilmann Kuhn, Luca Varani, P. Houlet, Tomas Gonzalez, J. C. Vaissiere
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 1994, 9 (5S), pp.584-587. ⟨10.1088/0268-1242/9/5S/050⟩
Semiconductor Science and Technology, IOP Publishing, 1994, 9 (5S), pp.584-587. ⟨10.1088/0268-1242/9/5S/050⟩
We present a theoretical analysis of number and current fluctuations in homogeneous n-Si resistors of submicron dimensions at increasing electric field strengths. To this purpose, we calculate the corresponding correlation functions. In the ballistic
Autor:
J.-P. Nougier
Publikováno v:
IEEE Transactions on Electron Devices. 41:2034-2049
After recalling the definition of the noise temperature, the macroscopic expressions for noise sources are shown not to be specific to the hot carrier regime, though dependent on the electric field strength. Careful modeling allows one to obtain impo
Publikováno v:
Semiconductor Science and Technology. 7:B308-B311
A direct numerical method is developed for solving the electron transient coupled Boltzmann equations in the Gamma and L valleys in InP. The complicated shape of the transient distribution function is obtained with a great accuracy. Fine structures o
Autor:
Luca Varani, Daniel Pardo, J. C. Vaissiere, Luca Reggiani, E. Starikov, Javier Mateos, Tomas Gonzalez, Pavel Shiktorov, P. Gaubert, V. Gruzhinskis, J. P. Nougier
Publikováno v:
Physica B: Condensed Matter
Physica B: Condensed Matter, Elsevier, 1999, 272 (1-4), pp.247-249. ⟨10.1016/S0921-4526(99)00279-3⟩
Physica B: Condensed Matter, Elsevier, 1999, 272 (1-4), pp.247-249. ⟨10.1016/S0921-4526(99)00279-3⟩
We present a theoretical analysis of the thermal conductivity of charge carriers in semiconductors under nonequilibrium conditions due to an applied electric field. The theory is based on a correlation-function formalism which directly relates this k
Autor:
Daniel Pardo, Pavel Shiktorov, E. Starikov, Tomas Gonzalez, Viktoras Gružinskis, Javier Mateos, Luca Reggiani, Luca Varani, J. P. Nougier, J. C. Vaissiere
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 1999, 74 (5), pp.723-725. ⟨10.1063/1.123103⟩
Scopus-Elsevier
Applied Physics Letters, American Institute of Physics, 1999, 74 (5), pp.723-725. ⟨10.1063/1.123103⟩
Scopus-Elsevier
We present a hydrodynamic-Langevin scheme to describe electronic noise in unipolar structures and evaluate the cross-correlation functions of conduction current fluctuations entering the transfer impedance method. The theory is developed in terms of
Autor:
Luca Varani, Rossella Brunetti, J. C. Vaissiere, Daniel Pardo, P. Golinelli, J. P. Nougier, Viktoras Gruzinskis, Tomas Gonzalez, E. Starikov, Luca Reggiani, María J. Martín, Pavel Shiktorov
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 1997, 12 (11), pp.1511-1513. ⟨10.1088/0268-1242/12/11/002⟩
Semiconductor Science and Technology, IOP Publishing, 1997, 12 (11), pp.1511-1513. ⟨10.1088/0268-1242/12/11/002⟩
We propose a novel numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors. The method is based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures. App
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20606a18e832710223fffc9f5e0ea4da
https://hal.archives-ouvertes.fr/hal-02394527
https://hal.archives-ouvertes.fr/hal-02394527