Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. P. Mize"'
Publikováno v:
IEEE Transactions on Nuclear Science. 32:3916-3920
Fast time-resolved measurements of the response of thin-oxide MOSFETs show that radiation-induced holes are removed from the gate oxide by a tunneling process. A tunneling rate of 0.35 nm/decade from each interface is found for SiO2 at 77 K. Fast tim
Publikováno v:
Journal of Applied Physics. 39:1923-1931
The Hall mobility of holes in silicon p‐type inversion layers has been measured as a function of gate voltage (perpendicular electric field), inversion layer orientation [(100), (110), and (111) surfaces], direction of current flow within an invers
Publikováno v:
Applied Physics Letters. 19:58-60
The piezoresistance effect in Si MOSFET p‐channel inversion layers is utilized for the detection of elastic surface waves. Theoretical results for detector sensitivity are described. It is shown that arrays of such detectors can be used for program
Publikováno v:
1970 International Electron Devices Meeting.
The silicon p-channel MOSFET has previously been characterized as a piezoresistive element. Since g m of the device varies with applied stress through modulation of surface-carrier mobility, it becomes of interest to examine the response of the devic
Publikováno v:
IEEE Transactions on Electron Devices. 14:631-631