Výsledky vyhledávání - "J. P. Manaud"

Akademický článek

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

Autor: S. J. Wen, G. Campet, J. P. Manaud

Publikováno v: Active and Passive Electronic Components, Vol 15, Iss 2, Pp 67-74 (1993)

Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the do

Externí odkaz: https://doaj.org/article/9a4cc7d5159e42ce93fcc208e2358c6b

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Akademický článek

Protection of Photoanodes Against Photo-Corrosion by Surface Deposition of Oxide Films: Criteria for Choosing the Protective Coating

Autor: G. Campet, J. P. Manaud, C. Puprichitkun, Z. W. Sun, P. Salvador

Publikováno v: Active and Passive Electronic Components, Vol 13, Iss 3, Pp 175-189 (1989)

Two strategies to solve the problem of instability of photoanodes against photocorrosion have been explored. The photocorrosion of photoanodes generally occurs when they enter the fabrication of efficient photoelectrochemical cells (i.e. showing high

Externí odkaz: https://doaj.org/article/f0168d34e8ed43b78395d10d71d42dd9

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Preparation and microstructural characterization of TiC and Ti0.6W0.4∕TiC0.6 composite thin films obtained by activated reactive evaporation

Autor: J.-P. Manaud, J.R. Vargas García, Y. LePetitcorps, J. A. Montes de Oca

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2008, 26 (3), pp.416-421. ⟨10.1116/1.2899457⟩

International audience; Titanium carbide-based coatings were deposited on W substrates at a high coating growth rate by activated reactive evaporation at 500 and 600 °C in a L560 Leybold system using propene as reactive atmosphere. The crystal struc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7b1605759e72d51ee8780a0083d811b
https://doi.org/10.1116/1.2899457

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CuO thin films thermal conductivity and interfacial thermal resistance estimation

Autor: J.-P. Manaud, Jean-Luc Battaglia, A. Kusiak, S. Gomez, Y. Lepetitcorps

Publikováno v: European Physical Journal: Applied Physics
European Physical Journal: Applied Physics, EDP Sciences, 2006, 35 (1), pp.17-27. ⟨10.1051/epjap:2006064⟩

International audience; The thermal conductivity and the interface thermal contact resistance of four different in thickness CuO films, obtained by PVD on a tungsten carbide substrate were investigated with a developed modulated photothermal method b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1604a4b403e386a936410286299161b6
https://doi.org/10.1051/epjap:2006064

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Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation

Autor: J. A. Montes de Oca Valero, Y. Le Petitcorps, J. P. Manaud, G. Chollon, F. J. Carrillo Romo, A. López M.

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2005, 23 (3), pp.394-400. ⟨10.1116/1.1874152⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2005, 23 (3), pp.394-400. ⟨10.1116/1.1874152⟩

International audience; Titanium and titanium nitride thin films were deposited on silica glass and W substrates at a high coating growth rate by plasma-activated reactive evaporation (ARE). The crystal structure, preferred orientation and grain size

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae813ef497270bc9bc4c723bc7f9fff
https://hal.archives-ouvertes.fr/hal-00083959

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Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

Autor: J. P. Manaud, S. J. Wen, G. Campet

Publikováno v: Active and Passive Electronic Components, Vol 15, Iss 2, Pp 67-74 (1993)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fc5ef9932319bcbe8a31005a72ab6da

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Sur un nouveau type d'oxydes doubles M+IVIn2O5 (M = Ti, V): étude cristallochimique

Autor: J. P. Manaud, J. Galy, J. Senegas

Publikováno v: Acta crystallographica Section B: Structural crystallography and crystal chemistry
Acta crystallographica Section B: Structural crystallography and crystal chemistry, International Union of Crystallography, 1975, 31 (6), pp.1614-1618. ⟨10.1107/S0567740875005791⟩

International audience; Two new compounds In2VO5 and In2TiO5, were prepared by solid-state reactions. In2VO5 crystallized as black needles with the a 7.232, b 3.468 c 14.82 Å, space-group Pnma, and Z = 4. In2TiO5 is isostructural (a 7.237, b 3.429,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c9d531f1008a3f4821e7f670e15a647
https://doi.org/10.1107/s0567740875005791

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Physical Properties of (n+)SrTiO3 Films

Autor: J. Claverie, J. P. Manaud, Guy Campet, C. Puprichitkun, Sun Zhi Wen

Publikováno v: Physica Status Solidi (a). 103:175-184

The physical properties of sputtered SrTiO3 films, determined from photoelectrochemical behavior and conductivity measurements, are examined. High ionized donor density, small carrier diffusion length, and low mobility characterize the n+-type semico

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f80de88a44dbdb22d1713bfd458e8439
https://doi.org/10.1002/pssa.2211030119

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