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Control of the leakage current in SrTiO3 films by acceptor doping

Autor: Jung-Dal Choi, S. H Kim, S. H. Paek, E. S Lee, J. H Jung, J. Y Seong, J. P. Mah, C. S Park

Publikováno v: Journal of Materials Science. 33:1239-1242

Stoichiometric SrTiO3 (STO) films doped with Fe or Cr were prepared by r.f. magnetron sputtering technique. The effects of Fe or Cr doping in the SrTiO3 films were studied on the leakage current property which was discussed by defect chemistry. The e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81892bc29d3e722607e28d71415a57d1
https://doi.org/10.1023/a:1004333911324

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Autor: Kong-Soo Lee, J. P. Mah, Juyeon Won, C.-S. Park, M.-S. Jeon, Duck-Kyun Choi, S.-H. Oh, J.-Y. Seong, S. H. Paek

Publikováno v: Journal of Materials Science Letters. 17:1457-1460

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f80114f8cb45af3ce0ec2a5d04d2e46d
https://doi.org/10.1023/a:1006507000113

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Characteristics of SrTiO3 thin films deposited under various oxygen partial pressures

Autor: C. S. Park, J. P. Mah, J. G. Lee, Jung-Dal Choi, Juyeon Won, S. H. Paek, J. E. Jang, S. T. Ahn, Y. S. Hwang

Publikováno v: Journal of Materials Science. 31:4357-4362

SrTiO3 thin films were deposited by rf-magnetron sputtering under various sputtering conditions followed by conventional furnace annealing at 600 and 700 °C. The amorphous SrTiO3 thin films crystallized into polycrystals at 600 °C. The leakage curr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0406a0467e97b156270cc05df51284d6
https://doi.org/10.1007/bf00356460

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On the phases formation in the calcination process of ZnO varistor

Autor: S. H. Paek, J. P. Mah, J. S. Choi

Publikováno v: Journal of Materials Science. 25:3375-3379

The degree of phase formation was investigated by Sb2O3 behaviour in the calcination process, and the change of microstructure and breakdown properties due to the phases formation in ZnO varistor. The samples were calcined at several temperatures for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a627465d1b188e8b5b9d1a90fc35a43
https://doi.org/10.1007/bf00587700

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On the relation between the interface reaction and annealing method of lead -zirconate-titanate thin film on Pt/Ti/Si substrate

Autor: Y. N. Kim, Chang-Joo Park, Y. S. Hwang, Ji-sim Jung, Jung-Dal Choi, J. P. Mah, S. H. Paek

Publikováno v: Journal of Materials Science Letters. 14:1168-1170

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::936784b242ea19bf606ad91904d309b6
https://doi.org/10.1007/bf00423395

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The leakage current mechanism of PZT thin films deposited by in-situ sputtering

Autor: Y. S. Hwang, S. H. Paek, J. P. Mah

Publikováno v: Journal of Materials Science Letters. 15:1030-1031

PZT thin film has been expected to replace conventional dielectric as a charge storage element in DRAM without use of a sophisticated structure such as a trench, because PZT has a dielectric constant much higher than silicon dioxide [1]. However, PZT

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::233c27385bc702ff5c55943e730881b0
https://doi.org/10.1007/bf00274897

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