Zobrazeno 1 - 10 of 66 pro vyhledávání: '"J. P. Lascaray"'
1
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal
Autor: J.P. Albert, Jeremie Torres, Yong Chen, M. Le Vassor d'Yerville, Sandra Ruffenach, J. P. Lascaray, David Cassagne, Olivier Briot, Emmanuel Centeno, Dominique Coquillat, R. Legros, David Peyrade, Roger Aulombard
Publikováno v: physica status solidi (b). 240:455-458
We have demonstrated the giant enhancement of second-harmonic generation in a one-dimensional GaN photonic crystal structure caused by the simultaneous achievement of strong fundamental field confinement and quasi-phase matching conditions. We have f
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0425dc1295d7ae1927ba74789f3ac24e
https://doi.org/10.1002/pssb.200303309
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2
Fabrication of GaN photonic crystals for 400 nm wavelength
Autor: R. Legros, Laurence Manin-Ferlazzo, D. Coquillat, David Peyrade, Yong Chen, J. P. Lascaray, Nicolas Grandjean, Amira Lebib
Publikováno v: Microelectronic Engineering. :843-849
We report on results of the fabrication and the micro-reflectance measurement of GaN photonic crystals. The etching performance of GaN has been studied with a conventional reactive ion etching system and SiCl4 plasma. We obtained an etch rate of 100
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3cade1f7ba9b7d7c1c9d6999884a3542
https://doi.org/10.1016/s0167-9317(01)00441-5
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4
Optical anisotropy in GaN grown onto A–plane sapphire
Autor: Andenet Alemu, Shuji Nakamura, J. P. Lascaray, Michel Julier, Javier Campo, Bernard Gil, Denis Scalbert
Publikováno v: Materials Science and Engineering: B. 59:159-162
GaN epilayers grown on A–plane sapphire experience an orthorhombic strain field giving an in-plane anisotropy of the optical response. By varying the polarisation conditions of reflectivity measurements, we measure the effects of the in-plane aniso
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e654cea646eb0cf60dd6be11b99b38d
https://doi.org/10.1016/s0921-5107(98)00386-9
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7
Determination of the spin-exchange interaction constant in wurtzite GaN
Autor: Shuji Nakamura, J. P. Lascaray, Javier Campo, M. Julier, Bernard Gil
Publikováno v: Physical Review B. 57:R6791-R6794
Wurtzite GaN grown onto an $A$-plane sapphire exhibits a uniaxial strain because the thermal expansion coefficient of the substrate is anisotropic. Measuring the dependence of the transition energies and of the oscillator strengths on the polarizatio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6036f418aab65cae08852e59420772e
https://doi.org/10.1103/physrevb.57.r6791
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8
Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique
Autor: J. P. Lascaray, Javier Campo, Dominique Coquillat, M. Julier, Olivier Briot, Denis Scalbert
Publikováno v: Materials Science and Engineering: B. 50:126-129
Wurtzite GaN on (0001) sapphire is studied by mean of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings, for the first time to our knowledge, to be about 0.05 meV/T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45752ba37bc98c629f974c025ba01fc5
https://doi.org/10.1016/s0921-5107(97)00149-9
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9
Magnetic-field-induced resonant coupling between1s- and3d-exciton states
Autor: A. El Ouazzani, Yu. G. Rubo, J. P. Lascaray, D. Coquillat, Alexey Kavokin
Publikováno v: Physical Review B. 56:13113-13117
The giant Zeeman splitting of exciton states in semimagnetic semiconductors ${\mathrm{Cd}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{Te}$ and ${\mathrm{Cd}}_{1\ensuremath{-}x}{\mathrm{Co}}_{x}\mathrm{Te}$ has been exploited to study the coupling of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c883ae8da4623e896d6a35aa23ab36b7
https://doi.org/10.1103/physrevb.56.13113
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10
Zeeman splittings of excitonic transitions at the Γ point in wurtzite GaN: A magnetoreflectance investigation
Autor: D. Coquillat, J. P. Lascaray, Olivier Briot, Denis Scalbert, Javier Campo, M. Julier
Publikováno v: Physical Review B. 56:R7108-R7111
Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the ${X}_{A}$ and ${X}_{C}$ exci
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9b7f8d3b76170771ea570bce5f62ed2d
https://doi.org/10.1103/physrevb.56.r7108
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