Výsledky vyhledávání - "J. P. Krusius"

Autor: B. Yost, J. P. Krusius, D. P. Seraphim, R. G. Greene, D.S. Skinner

Publikováno v: Proceedings of the IEEE. 90:559-580

Ultralarge active-matrix liquid-crystal displays (AMLCD) and plasma display panels (PDP) are both being developed as flat-panel display (FPD) competitors to the bulky cathode-ray tube for color video and monitor applications. The visual requirements

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfc94ff6b07c6118c05017581764dcd0
https://doi.org/10.1109/jproc.2002.1002527

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Band renormalization and dynamic screening in near band gap femtosecond optical probing of InGaAs

Autor: J. E. Bair, Clifford R. Pollock, J. P. Krusius, D. Cohen

Publikováno v: Solid State Communications. 92:231-236

The effect of band renormalization and dynamic screening in near band edge femtosecond optical probing of In0.53Ga0.47As thin films has been investigated quantitatively. Simulated results, obtained from an ensemble Monte Carlo formulation, are in exc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::927d33ff2561b5ce02cbc43265a502d2
https://doi.org/10.1016/0038-1098(94)90882-6

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Chemically Assisted Ion Beam Etching for Silicon‐Based Microfabrication

Autor: P. Chapman, J. P. Krusius, Y. S. Chieh

Publikováno v: Journal of The Electrochemical Society. 141:1585-1589

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39c1fa28aacbd9c894a6e3f292984c7a
https://doi.org/10.1149/1.2054966

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30.3: Seamless Tiling Technology for Large Direct‐View Color AMLCD's

Autor: D.S. Skinner, D. P. Seraphim, B. Yost, J. P. Krusius, R. G. Greene

Publikováno v: SID Symposium Digest of Technical Papers. 31:461-463

We describe a novel low cost seamless AMLCD tiling technology that has been developed by Rainbow Displays, Inc. This tiling technology facilitates robust, continuous, and uniform displays without visible seams. Prototype displays with 4 tiles, 38.6�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56a47d663f52774501b1c0838044e9ac
https://doi.org/10.1889/1.1832980

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Spin-on-glass for 200 nm trench isolation structures

Autor: Yosi Shacham-Diamand, J P Krusius, J W Lutze

Publikováno v: Journal of Micromechanics and Microengineering. 1:46-51

Technologies for utilizing spin-on-glass (SOG) in trench isolation are discussed. Two trench isolation technologies: a trench filled with SOG and a polysilicon filled trench planarized by SOG, are examined. The authors have successfully filled and pl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48363ec83aaf1d0ef615b32396e03928
https://doi.org/10.1088/0960-1317/1/1/009

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Shallow, small area, TiSi2 contacts to n+ and p+ silicon

Autor: A. H. Perera, J. P. Krusius

Publikováno v: Journal of Electronic Materials. 19:1145-1149

Shallown + andp + doped source/drain contacts to silicon as small as 300 × 200 nm have been fabricated using an optimized silicided (TiSi2) contact technology. Well behaved structural and electrical characteristics were found. The electrical series

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07377d2db05ff079b17f7327a6364fc3
https://doi.org/10.1007/bf02651996

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Packaging Architecture Considerations of High Density Multi-Chip Electronic Packages Via System Optimization

Autor: J. P. Krusius

Publikováno v: Journal of Electronic Packaging. 112:267-271

Multi-chip packaging of high density CMOS based systems is analyzed using package system simulation, a new systematic methodology for design and trade-off studies of electronic packages in order to examine future trends. Technology parameters for a r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a42cabea3852be398f67a64505e2c62a
https://doi.org/10.1115/1.2904377

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Field Oxide Thinning in Poly Buffer LOCOS Isolation with Active Area Spacings to 0.1 μm

Autor: A. H. Perera, J. P. Krusius, J. W. Lutze

Publikováno v: Journal of The Electrochemical Society. 137:1867-1870

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f3ad7d6a3905e8e6d36856162c01cc4
https://doi.org/10.1149/1.2086821

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Experimental verification of the impact of mosfet series resistance on device miniaturization down to source-drain areas as small as 0.2 μm by 0.3 μm

Autor: A. H. Perera, J. P. Krusius

Publikováno v: Microelectronic Engineering. 11:61-64

The contact and sheet resistance contributions to the series resistance of MOSFETs for silicided n+ and p+ source drain areas ≥ 0.2×0.3 μ2, have been measured. For S/D sizes < 0.7 μm (i.e. shorter than transfer length), the current flow is multi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5521717aed8c83ebdd7565bd882ba486
https://doi.org/10.1016/0167-9317(90)90073-3

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A new positive novalac-based resist for sub-micron ebeam lithography

Autor: J. P. Krusius, A. H. Perera

Publikováno v: Microelectronic Engineering. 11:455-458

A new positive tone novalac-based resist, SYSTEM-9, has been characterized on a Cambridge Instruments EBMF-10.5 ebeam lithography tool. The performance of this resist with a variety of commercially available developers has been investigated and it yi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e084a778115830cd19906e8193285a0b
https://doi.org/10.1016/0167-9317(90)90150-r

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