Zobrazeno 1 - 10
of 49
pro vyhledávání: '"J. P. Hirtz"'
Autor:
William J. Foster, J. A. Hirtz, C. Farrell, M. Reistroffer, R. J. Twitchett, R. C. Martindale
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract The role of ocean acidification in the end-Permian mass extinction is highly controversial with conflicting hypotheses relating to its timing and extent. Observations and experiments on living molluscs demonstrate that those inhabiting acidi
Externí odkaz:
https://doaj.org/article/06b615ec4f6144a7ab57a3d8be7d10c2
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:245-249
Record pulse energy (E/spl sim/0.3 /spl mu/J) is reported for a gain-switched laser diode stack with subnanosecond electrical pump pulses. Pulsewidths near 100 ps are seen to be feasible. A detailed time-resolved analysis of emitted near-field patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f779611cdd1b6ff356b64344a2c66f5d
https://doi.org/10.1109/2944.605664
https://doi.org/10.1109/2944.605664
Publikováno v:
Applied Surface Science. :589-596
We have studied the early stages of growth of GaAs on Si (001), misoriented by 4° towards [110], by migration-enhanced epitaxy (MEE) in a molecular beam epitaxy (MBE) system. We present results using in situ and ex situ analyses, reflection high-ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670eb77ed65dfbd2b8201e2591adb04b
https://doi.org/10.1016/0169-4332(92)90306-i
https://doi.org/10.1016/0169-4332(92)90306-i
Publikováno v:
Journal of Applied Physics. 69:3297-3302
The growth rates of GaP and InP deposited by metalorganic molecular beam epitaxy using triethylgallium, trimethylindium, and precracked phosphine have been studied by reflection high energy electron diffraction and related to composition variations o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2d9c0ea232c62408ff3faa532b74c4
https://doi.org/10.1063/1.348551
https://doi.org/10.1063/1.348551
Publikováno v:
Applied Physics Letters. 75:2521-2523
Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4624ecb51067ad6c8d154db0e21bb14b
https://doi.org/10.1063/1.125064
https://doi.org/10.1063/1.125064
Autor:
Mauro Bettiati, V. Cargemel, S. Fromy, D. Chambonnet, D. Laffitte, P. Garabedian, J. P. Hirtz, François Laruelle, P. Pagnod-Rossiaux, L. Raymond, J. Van de Casteele
Publikováno v:
SPIE Proceedings.
We demonstrate very high reliability level on 980-1060nm high-power single-mode lasers through multi-cell tests. First, we show how our chip design and technology enables high reliability levels. Then, we aged 758 devices during 9500 hours among 6 ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3141afaff22c48a581b719b74c232408
https://doi.org/10.1117/12.762943
https://doi.org/10.1117/12.762943
Publikováno v:
Journal of Electronic Materials. 19:567-573
The growth of GaAs on patterned Si substrates is essential for the integration of GaAs and Si devices. Moreover this growth may have to be done in wells to planarize the surfaces of the Si and GaAs devices for their interconnection. In this study, Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f19f04f1b5607c79a93c5a587890759b
https://doi.org/10.1007/bf02651280
https://doi.org/10.1007/bf02651280
Publikováno v:
Thin Solid Films. 184:429-436
AlGaAs/GaAs multiquantum-well (MQW) structures deposited on Si(001) substrates misoriented by 4° toward 〈110〉 have been fabricated by molecular beam epitaxy (MBE) and a combination of organo-metallic chemical vapour deposition (OMCVD) and MBE. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87d6419d4d7850ef45c7b6772b07e041
https://doi.org/10.1016/0040-6090(90)90441-f
https://doi.org/10.1016/0040-6090(90)90441-f
Autor:
V. Cargemel, P. Bourdeaux, S. Fromy, P. Pagnod-Rossiaux, J. P. Hirtz, F. Laruelle, M. Bettiati, P. Garabedian, J. Van de Casteele, D. Chambonnet
Publikováno v:
2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.
We demonstrate record kink-free output powers, over 1.2 W, for 1060-nm single-mode lasers. Saturation powers of 1.9 W are observed at room temperature that guarantee high-power and kink margins with respect to typical operation conditions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d265ba1735674bd8052e7ca72903df6
https://doi.org/10.1109/cleoe-iqec.2007.4385965
https://doi.org/10.1109/cleoe-iqec.2007.4385965
Publikováno v:
Journal of Crystal Growth. 127:255-257
High quality Ga 0.5 In 0.5 P layers were grown by chemical beam epitaxy (CBE) using tertiarybutylphosphine (TBP) instead of more conventional phosphine (PH 3 ) gaseous source. It is shown that the use of TBP leads to a significant decrease, by at lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772952c237546c990589c21a846240d1
https://doi.org/10.1016/0022-0248(93)90616-5
https://doi.org/10.1016/0022-0248(93)90616-5