Zobrazeno 1 - 10
of 12
pro vyhledávání: '"J. P. Flint"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Frailty is a complex trait. Twin studies and high-powered Genome Wide Association Studies conducted in the UK Biobank have demonstrated a strong genetic basis of frailty. The present study utilized summary statistics from a Genome Wide Assoc
Externí odkaz:
https://doaj.org/article/0f6a3ca14720400fae9492624b63f56f
Frailty is a complex trait. Twin studies and a high-powered Genome Wide Association Study (GWAS) conducted in the UK Biobank have demonstrated a strong genetic basis of frailty. The present study utilized summary statistics from this GWAS to create a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6597e89bb5d6151b8f99dd8190f600
https://doi.org/10.1101/2023.04.03.23288064
https://doi.org/10.1101/2023.04.03.23288064
Publikováno v:
Infrared Technology and Applications XLIV.
Cadmium Zinc Telluride (Cd1-xZnxTe or CZT) is a ternary II-VI compound semiconductor material that has been widely used in infrared detector applications for many years. Due to its lattice spacing, CZT is the substrate of choice for stabilizing Mercu
Publikováno v:
Infrared Technology and Applications XLIII.
Cadmium Zinc Telluride (CZT) is an important compound semiconductor material upon which Mercury Cadmium Telluride (MCT) layers are deposited epitaxially to form structures that are used in high performance detectors covering a wide infrared (IR) spec
Autor:
Nemanja Krsmanovic, Eissler Elgin E, J. P. Flint, Marc H. Weber, Howard L. Glass, Th. Gessmann, Russell B. Tjossem, Cs. Szeles, Kelvin G. Lynn
Publikováno v:
Physical Review B. 62:R16279-R16282
The effects of two intrinsic deep levels on electrical compensation in semi-insulating CdTe and Cd-Zn-Te crystals are reported here. These levels were found in samples grown by conventional Bridgman and high-pressure Bridgman techniques. The levels w
Autor:
Sasson Amirhaghi, Mark J. Furlong, G. Meshew, J. P. Flint, Gordon Dallas, J. Trevethan, Andrew Mowbray, Rebecca Martinez, Brian Smith
Publikováno v:
Quantum Sensing and Nanophotonic Devices X.
In this paper we describe the bulk crystal growth and characterization of low defect mono-crystalline InSb and GaSb substrates suitable for use in the epitaxial deposition of infrared detector structures. Results will be presented on the production o
Autor:
Lisa P. Allen, J. Trevethan, Becky Martinez, G. Meshew, J. P. Flint, A. Mobray, Mark J. Furlong
Publikováno v:
Quantum Sensing and Nanophotonic Devices IX.
As size requirements and pixel viabilities for infrared focal plane arrays (IRFPAs) continue to increase, resolution and sensitivity requirements for high performance advanced imaging systems must meet or surpass stringent demands. Strain layer super
Autor:
A. Khoshakhlagh, J. Trevethan, Lisa P. Allen, Gordon Dallas, Cory J. Hill, G. Meshew, J. P. Flint
Engineered substrates such as large diameter (100mm) GaSb wafers need to be ready years in advance of any major shift in DoD and commercial technology, and typically before much of the rest of the materials and equipment for fabricating next generati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23ccc6b37b4441fc99dd52fa204a80de
https://resolver.caltech.edu/CaltechAUTHORS:20161101-082835585
https://resolver.caltech.edu/CaltechAUTHORS:20161101-082835585
Autor:
Gail J. Brown, Gordon Dallas, Lisa P. Allen, J. P. Flint, G. Meschew, Arezou Khoshakhlagh, Daniel Bakken, Cory J. Hill
Publikováno v:
SPIE Proceedings.
A key component for third generation FPA development is the megapixel strain layer superlattice (SLS) structures on GaSb substrates for advanced infrared detectors. A significant aspect that inhibits widespread application of large format device grow
Autor:
Corin Michael R. Greaves, Howard L. Glass, J.-O. Ndap, J. P. Flint, X. Ma, Arnold Burger, Tuviah E. Schlesinger, Ralph B. James, K. Chattopadhyay
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II.
An irreversible deterioration of CdTe and CdZnTe detectors after heat treatments in the temperature range of 150 - 200 degrees Celsius was reported by several authors; however, the nature of the processes responsible for the detector degradation and