Výsledky vyhledávání - "J. P. Fillard"

A new approach to the similarity relations in the fuzzy set theory

Autor: P. Faurous, J. P. Fillard

Publikováno v: Information Sciences. 75:213-221

The subtle theory of “fuzzy” sets has long been proposed by Zadeh as an extension of the classical theory of “hard” sets. In this paper we show how the properties of reflexivity and transitivity of a fuzzy relation may be reconsidered if they

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4222c565af87630024f05ce4ad4c45eb
https://doi.org/10.1016/0020-0255(93)90055-q

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Phase-stepping microscopy (PSM): a qualification tool for electronic and optoelectronic devices

Autor: D. Montaner, M Castagne, P C Montgomery, J P Fillard

Publikováno v: Semiconductor Science and Technology. 7:A237-A242

Phase-stepping microscopy (PSM) is a useful optical metrology technique for the qualification of electronic and optoelectronic devices. Based on interference microscopy, the method uses a CCD camera and a digital image-processing system for automatic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::481c37080263cf13a2dee4dfd2b18bce
https://doi.org/10.1088/0268-1242/7/1a/046

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Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments

Autor: J. Bonnafe, H Rufer, P. Gall, J P Fillard, K Lohnert, M Baumgartner, J. L. Weyher, Le Si Dang

Publikováno v: Semiconductor Science and Technology. 7:A45-A52

Three independent but complementary methods (DSL photoetching combined with etch rate profiling, spatially resolved PL and LST) were employed to study the distribution of microdefects and electrically active centres in commercially available SI undop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d59dce5bf276d5ba3b7c5d083a848da
https://doi.org/10.1088/0268-1242/7/1a/009

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LST-detected microprecipitates and their role in the performance of GaAs integrated circuits

Autor: D Achvar, P. Gall, J P Fillard, M Castagne

Publikováno v: Semiconductor Science and Technology. 7:A146-A149

The laser-scanning tomography technique has been used to explore the immediate vicinity of implanted MESFET structures in SI GaAs. From high-resolution tomography images it has been observed that apart from the well known microprecipitates which deco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b6def2aa5a84db9d160562785cdebc5a
https://doi.org/10.1088/0268-1242/7/1a/027

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Laser-scanning tomography: a survey of recent investigations in semiconductor materials

Autor: T Ogawa, P. Gall, J P Fillard, M Castagne, J. Bonnafe

Publikováno v: Semiconductor Science and Technology. 7:A283-A287

Laser-scanning tomography (LST) was proposed by Moriya and Ogawa in 1983 as a non-destructive and non-invasive method for imaging small grown-in precipitates in the bulk of semiconductor materials. It has been shown that particles as small as 1 nm ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44fd673a6ed7ecaabea3970514e8aaa2
https://doi.org/10.1088/0268-1242/7/1a/054

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Near infrared dark-field microscopy with video for studying defects in III-V compound materials

Autor: J P Fillard, P C Montgomery

Publikováno v: Measurement Science and Technology. 1:120-125

A system is described using near infrared dark-field microscopy (DFM) for the analysis of defects in III-V compound materials. The microscope uses a halogen bulb light source and a silicon vidicon camera detector. High-contrast images of defects are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fcf936a11a5d0824aeec68a2e885ebb2
https://doi.org/10.1088/0957-0233/1/2/003

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Noninvasive optical characterization of Ohmic contacts

Autor: M. Castagne, P. Gall, Alan R. Mickelson, J. P. Fillard, E. Bradbury, H. Lee, P.D. Biernacki

Publikováno v: Proceedings of LEOS'94.

Preliminary results indicate that asymmetries present in the electrooptic sampling data may correspond to defect clusters created in the Ohmic contact process region and also possibly due to the crystal defect regions present in the bulk GaAs wafer.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d14eb23aa01b52c407ab8698a8b6cb83
https://doi.org/10.1109/leos.1994.586301

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