Zobrazeno 1 - 10
of 213
pro vyhledávání: '"J. P. Faurie"'
Autor:
Harpreet Kaur, Rajesh Sharma, T. Laurent, J. Torres, P. Nouvel, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.-P. Faurie, B. Beaumont
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::927d6f8693c6116fa67d8126bf649566
https://doi.org/10.1007/s00339-022-05284-8
https://doi.org/10.1007/s00339-022-05284-8
Autor:
Luca Varani, M. Chmielowska, R. Sharma, Jérémi Torres, T. Laurent, J. P. Faurie, Stéphane Blin, B. Beaumont, Philippe Nouvel, Yvon Cordier
Publikováno v:
physica status solidi (a). 210:1454-1458
We investigate the relative transmission and the effective gain of a two-dimensional electron gas (2DEG) in the terahertz (THz) frequency domain. The position of THz source, device, and detector is numerically simulated in order to obtain an optimize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069487e23eb140037744b31d9bfd586c
https://doi.org/10.1002/pssa.201228869
https://doi.org/10.1002/pssa.201228869
Autor:
Pierre Gibart, Yvon Cordier, Jean Massies, Zahia Bougrioua, Maxime Hugues, Eric Frayssinet, P. Lorenzini, Fabrice Semond, B. Beaumont, J. P. Faurie, Franck Natali
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩
Journal de Physique IV Proceedings, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩
Journal de Physique IV Proceedings, EDP Sciences, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩
Journal de Physique IV Proceedings, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩
In this work AlGaN/GaN high electron mobility transistors have been grown on Silicon (111), Silicon Carbide and GaN templates on Sapphire. Both the structural and the electrical properties of these layers have been studied in order to determine the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f874e814b3c27117fd1605a57edf9bf
https://doi.org/10.1051/jp4:2006132070
https://doi.org/10.1051/jp4:2006132070
Autor:
Ramūnas Aleksiejūnas, Tadas Malinauskas, Eric Frayssinet, M. Sūdžius, Kęstutis Jarašiūnas, Pierre Gibart, J. P. Faurie, Bernard Beaumont
Publikováno v:
physica status solidi (a). 202:566-571
Room temperature time-resolved four-wave mixing has been performed in MOCVD GaN epilayers, grown on sapphire substrates by using either conventional or a 3D-growth mode with Si/N treatment technique (micro-ELO). Picosecond pulses at 355 nm were used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86e8ebcb97dc2e2f1e6fb97ed2069ffe
https://doi.org/10.1002/pssa.200460430
https://doi.org/10.1002/pssa.200460430
Publikováno v:
Superlattices and Microstructures. 36:833-847
The growth of high-quality GaN layers on a wafer size appropriate for device applications is based on heteroepitaxy on foreign substrates. Heteroepitaxial GaN layers with low densities (below 106 cm−2) of extended structural defects can be achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c6c6b627c92d3ced93252134b0f85f
https://doi.org/10.1016/j.spmi.2004.09.039
https://doi.org/10.1016/j.spmi.2004.09.039
Autor:
Jose Luis Pau, E. Calleja, C. Rivera, Bernard Beaumont, E. Muñoz, Eric Frayssinet, J. P. Faurie, Pierre Gibart, J. Pereiro, Udo Schühle
Publikováno v:
Superlattices and Microstructures. 36:807-814
The performance of nitride-based photodetectors is investigated beyond the usual near-UV (400–300 nm) and mid-UV (300–200 nm) operation ranges. The responses of metal–semiconductor–metal (MSM) photodiodes were analyzed in the vacuum–UV and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5052138e3fcf00e730580a0e6e5777ce
https://doi.org/10.1016/j.spmi.2004.09.037
https://doi.org/10.1016/j.spmi.2004.09.037
Autor:
C. Rivera, Pierre Gibart, Eric Frayssinet, Bernard Beaumont, J. P. Faurie, Jose Luis Pau, E. Muñoz, Udo Schühle, E. Calleja
Publikováno v:
Journal of Applied Physics. 95:8275-8279
The spectral response of metal-semiconductor-metal (MSM) and Schottky barrier photodiodes have been studied in the near- and vacuum ultraviolet (VUV). Devices were fabricated on micro-epitaxial lateral overgrowth GaN layers, which presented dislocati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08e7b70144aa67044b38df83cda9895c
https://doi.org/10.1063/1.1748855
https://doi.org/10.1063/1.1748855
Publikováno v:
Microelectronics Reliability. 44:223-228
We propose to model the spectral response of Zn(Mg)BeSe p–i–n photodetectors in order to understand their behavior and improve their performances such as maximum response and rejection rate. With this aim in view, we carry out a preliminary model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8bfdc6a2e2fa98534f0eaa7f8b13bb
https://doi.org/10.1016/s0026-2714(03)00221-x
https://doi.org/10.1016/s0026-2714(03)00221-x
Publikováno v:
Journal of Physics D: Applied Physics. 35:3015-3020
We present a study of the nanoindentation behaviour of Zn1−xBexSe heteroepitaxial layers grown onto (001)-oriented GaP and GaAs substrates in the whole composition range 0≤x≤1. The alloy composition, applied peak load and orientation of the Ber
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d76bb85c7b40d48e4210c8b87aa90b4
https://doi.org/10.1088/0022-3727/35/22/317
https://doi.org/10.1088/0022-3727/35/22/317
Publikováno v:
Solid State Communications. 123:209-212
The electronic band structures of Zn1−xBexSe alloys are computed employing the virtual crystal approximation and empirical pseudopotentials. Pseudopotential form factors for ZnSe are fitted to experimentally determined critical point energies, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4deab986fdf0a417d85d0ef17f41c558
https://doi.org/10.1016/s0038-1098(02)00254-5
https://doi.org/10.1016/s0038-1098(02)00254-5