Zobrazeno 1 - 8
of 8
pro vyhledávání: '"J. P. Endle"'
Autor:
J. P. Endle, R. L. Hance, John G. Ekerdt, Sucharita Madhukar, J. M. White, Y. M. Sun, N. Nguyen
Publikováno v:
Thin Solid Films. 388:126-133
Pyrolysis and oxidation reactions of the iridium precursor, (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium (I), were studied to identify the role of O 2 in chemical vapor deposition film growth. A toluene solution of (methylcyclopentadienyl)(1,5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca429d651ea5e744cd3d024deaa54493
https://doi.org/10.1016/s0040-6090(01)00808-2
https://doi.org/10.1016/s0040-6090(01)00808-2
Autor:
Alan H. Cowley, John G. Ekerdt, J. P. Endle, J. M. White, Y. M. Sun, N. Nguyen, Joel S. Silverman
Publikováno v:
Thin Solid Films. 385:66-73
Direct liquid injection chemical vapor deposition of (Al,Ti)N films using NH3 and a solution of tetrakis(dimethylamino)titanium and the tris(dimethylamino)alane dimer in toluene is reported. The decomposition reactions of the dimethylamino-based prec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29426bd395f0f7d99a5e2add21722f60
https://doi.org/10.1016/s0040-6090(00)01879-4
https://doi.org/10.1016/s0040-6090(00)01879-4
Autor:
N. Mettlach, X.-M. Yan, J. P. Endle, R. L. Hance, J. M. White, John G. Ekerdt, P. D. Kirsch, Y. M. Sun, Sucharita Madhukar
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:10-16
We have investigated the chemistry of the iridium precursor ((methylcyclopentadienyl) (1,5-cyclooctadiene))iridium (MeCpIrCOD) and have utilized the precursor for chemical vapor deposition (CVD) of iridium films. The vapor pressure of the precursor i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01c3af76f98070e8d858725708114dd
https://doi.org/10.1116/1.582151
https://doi.org/10.1116/1.582151
Publikováno v:
Materials Science in Semiconductor Processing. 2:253-261
Metallorganic chemical vapor deposition (MOCVD) of AlxTi1−xN films was investigated at 200 to 400°C using terakis(dimethylamino)titanium (TDMAT), dimethylaluminum hydride (DMAH), triethylaluminum (TEA) and dimethylhydrazine (DMH). The film composi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8b6dffc7704370f87c876e7b1fc664
https://doi.org/10.1016/s1369-8001(99)00021-9
https://doi.org/10.1016/s1369-8001(99)00021-9
Autor:
J. M. White, Y. M. Sun, John G. Ekerdt, Sandra R. Whaley, R. L. Hance, R. Mahaffy, K. Smith, J. P. Endle
Publikováno v:
Thin Solid Films. 346:100-107
Oxygen and substrate effects on iridium film growth have been investigated by metallorganic chemical vapor deposition (MOCVD), insitu X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46963ff22932b4e547c8f3c59312bc57
https://doi.org/10.1016/s0040-6090(98)01458-8
https://doi.org/10.1016/s0040-6090(98)01458-8
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1262-1267
Low pressure chemical vapor deposition TiN films were produced on SiO2 by codosing tetrakis(dimethylamido)titanium (TDMAT) with selected N-containing precursors. The films were grown at total pressures ranging from 10−4 to 10−3 Torr and temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bf3d59baad72369ae1991ece6066a4
https://doi.org/10.1116/1.581271
https://doi.org/10.1116/1.581271
Publikováno v:
MRS Proceedings. 541
Iridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a2a078c985545ad58cbe38f3de37d6
https://doi.org/10.1557/proc-541-101
https://doi.org/10.1557/proc-541-101
Publikováno v:
MRS Proceedings. 495
AlxTi1-xN film growth has been studied by a organometallic chemical vapor deposition and in-situ X-ray photoelectron spectroscopy. Terakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) were used as the Ti, N and Al precursors. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c0aec2ffb9d9184c9fd5f768d1a10c
https://doi.org/10.1557/proc-495-165
https://doi.org/10.1557/proc-495-165