Zobrazeno 1 - 10
of 14
pro vyhledávání: '"J. P. Commin"'
Autor:
Dmitry G. Revin, Kenneth Kennedy, Shiyong Zhang, J. P. Commin, John W. Cockburn, Andrey B. Krysa
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1417-1425
We review the recent development of high-performance short-wavelength (λ ~ 3.05-3.8 μm) strain-compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers (QCLs). The lasers are demonstrated in which wavelengths as low as 3.05 μm are obtained at temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c5cad9d397ae1d96bd53a7069855acb
https://doi.org/10.1109/jstqe.2011.2128858
https://doi.org/10.1109/jstqe.2011.2128858
Autor:
Dmitry G. Revin, J. P. Commin, Kenneth Kennedy, Andrey B. Krysa, John W. Cockburn, C. N. Atkins, Thomas Walther, Y. Qiu
Publikováno v:
IEEE Photonics Technology Letters. 23:774-776
We demonstrate λ ~ 9 μm GaAs/Al0.45Ga0.55As quantum cascade lasers (QCLs) operating up to 320 K. Metal- organic vapor phase epitaxy has been used throughout for the growth of the devices. Detailed comparison has been carried out for the QCLs with v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd06545f3497d7767b00ad2e923a25ba
https://doi.org/10.1109/lpt.2011.2138124
https://doi.org/10.1109/lpt.2011.2138124
Autor:
Kenneth Kennedy, Charles N. Ironside, Andrey B. Krysa, W. Meredith, Mark Hopkinson, Shiyong Zhang, John W. Cockburn, Thomas J. Slight, A. McKee, Dmitry G. Revin, J. P. Commin
Publikováno v:
2011 IEEE Photonics Society Summer Topical Meeting Series.
The 3–4μm wavelength range is of key technological importance for a wide range of applications. As a consequence of the strong fundamental C-H stretch mode that occurs at around 3.3μm, the detection of many important hydrocarbon species has maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e98226a6cad5c043d2b4b5dbd927a248
https://doi.org/10.1109/phosst.2011.6000042
https://doi.org/10.1109/phosst.2011.6000042
Autor:
Andrey B. Krysa, John W. Cockburn, Mark Hopkinson, J. P. Commin, Kenneth Kennedy, Dmitry G. Revin, Shiyong Zhang
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
We report the development of strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers emitting in the wavelength range of 3.3–3.8µm with high peak optical power (up to 17W at 300K), and high temperature operation (up to 400K).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d3e15eaa4844e43bcc20e4711e2b981
https://doi.org/10.1364/cleo.2010.ctue1
https://doi.org/10.1364/cleo.2010.ctue1
Autor:
Shiyong Zhang, Kenneth Kennedy, Dmitry G. Revin, Mark Hopkinson, J. P. Commin, John W. Cockburn, Andrey B. Krysa
Publikováno v:
Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.
We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15µm. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1784332c042bdf1e84cf4c77d15734
https://doi.org/10.1364/cleo.2009.cthaa5
https://doi.org/10.1364/cleo.2009.cthaa5
Autor:
Mykhaylo P. Semtsiv, William Ted Masselink, Dmitry G. Revin, J. C. Cockburn, M. D. Chashnikova, Kenneth Kennedy, Andrey B. Krysa, J. P. Commin, Richard A. Hogg
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5aa044c97a282980e2c60dc4cc2ef9
https://doi.org/10.7567/ssdm.2008.e-9-2
https://doi.org/10.7567/ssdm.2008.e-9-2
Autor:
Thomas Walther, Kenneth Kennedy, John W. Cockburn, Andrey B. Krysa, Dmitry G. Revin, J. P. Commin, Y. Qiu
Publikováno v:
Electronics Letters. 47:559
Reported is the development of λ ~ 4 μm highly strain-compensated In 0.7 Ga 0.3 As/In 0.34 Al 0.66 As/InP quantum cascade lasers grown by metal organic vapour phase epitaxy. 10 μm-wide and 3 mm-long devices with as-cleaved facets deliver more than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b93e67b4286cea44669742cad34006f7
https://doi.org/10.1049/el.2011.0656
https://doi.org/10.1049/el.2011.0656
Autor:
Andrey B. Krysa, Dmitry G. Revin, John W. Cockburn, Shiyong Zhang, J. P. Commin, Kenneth Kennedy
Publikováno v:
Applied Physics Letters. 97:111113
We report on the development of strain compensated InGaAs/AlAs(Sb) quantum cascade lasers, incorporating a buried third order distributed feedback grating. Single mode operation with a side mode suppression ratio of ∼30 dB has been achieved in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912ba8f47ca04898882e6e20aedc607a
https://doi.org/10.1063/1.3487781
https://doi.org/10.1063/1.3487781
Autor:
Shiyong Zhang, John W. Cockburn, Andrey B. Krysa, Kenneth Kennedy, J. P. Commin, Dmitry G. Revin
Publikováno v:
Applied Physics Letters. 97:031108
We demonstrate λ∼3.5 μm and λ∼3.3 μm strain compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating in pulse regime at temperatures up to at least 400 K. Peak optical power exceeding 3.5 W at 300 K has been achieved at both wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b889df2e0cbd24b16480b9a5d86337
https://doi.org/10.1063/1.3464551
https://doi.org/10.1063/1.3464551
Autor:
John W. Cockburn, J. P. Commin, Andrey B. Krysa, Dmitry G. Revin, Kenneth Kennedy, Shiyong Zhang
Publikováno v:
Electronics Letters. 46:439
Room temperature strain-compensated In 0.7 Ga 0.3 As/AlAs(Sb)/InP quantum cascade lasers operating at λ ~ 3.3 μm are reported. 20 μm wide- and 1.5 mm-long devices with as-cleaved facets deliver more than 1 W peak optical power per facet at 300 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13260f16eb3eb4dddbebe58746bc7b36
https://doi.org/10.1049/el.2010.0202
https://doi.org/10.1049/el.2010.0202