Zobrazeno 1 - 10
of 10
pro vyhledávání: '"J. P. Bonsall"'
Autor:
Stephen P. Buchner, Daniele M. Monahan, Robert A. Weller, Ronald D. Schrimpf, Stephen LaLumondiere, John A. Kozub, Dale McMorrow, J. P. Bonsall, Joel M. Hales, Liang Wang, Sharon M. Weiss, Ani Khachatrian, Chuanmin Wang, En Xia Zhang, Landen D. Ryder, Yuanfu Zhao, Kaitlyn L. Ryder, Andrew L. Sternberg, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 68:626-633
Heavy-ion, focused X-ray, and pulsed laser single-event transient (SET) experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between different sources. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e449e3228ed3da3319d0f3035cfce7c
https://doi.org/10.1109/tns.2021.3060339
https://doi.org/10.1109/tns.2021.3060339
Autor:
J. P. Bonsall, Dale Brewe, Patrick S. Goley, John D. Cressler, Nelson E. Lourenco, Zachary E. Fleetwood, Delgermaa Nergui, Adrian Ildefonso, Anup P. Omprakash, George N. Tzintzarov, Hunter Kettering, Stephen LaLumondiere, Daniele M. Monahan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:91-98
This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data and circuit-level upset data from pulsed X-rays are analyzed and com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c0fbc34efc940e04d9da94c8dda363
https://doi.org/10.1109/tns.2019.2959973
https://doi.org/10.1109/tns.2019.2959973
Autor:
E. C. Dillingham, Adam C. Scofield, Ani Khachatrian, Dale McMorrow, S. D. LaLumondiere, C. Affouda, S. P. Buchner, Andrew D. Koehler, Dale Brewe, J. P. Bonsall
Publikováno v:
IEEE Transactions on Nuclear Science. 66:1682-1687
A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a098fe1c3d9cf3f2a7e34f0e41c66a
https://doi.org/10.1109/tns.2019.2910493
https://doi.org/10.1109/tns.2019.2910493
Autor:
E. C. Dillingham, Andrew D. Koehler, Ani Khachatrian, Nicolas J.-H. Roche, S. D. LaLumondiere, J. P. Bonsall, Dale McMorrow, Dale Brewe, Travis J. Anderson, S. P. Buchner
Publikováno v:
IEEE Transactions on Nuclear Science. 66:368-375
Focused, pulsed X-rays are used to generate single-event transients (SETs) in metal–insulator–semiconductor (MIS)-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in order to investigate the mechanisms responsible for SETs. Unlike Schott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b0934db1c12ba45b52f01b8e4b6917
https://doi.org/10.1109/tns.2018.2885824
https://doi.org/10.1109/tns.2018.2885824
Autor:
Ronald D. Schrimpf, David Cardoza, Erik C. Dillingham, Nathan P. Wells, Stephen LaLumondiere, Adam C. Scofield, Petras Karuza, J. P. Bonsall, William T. Lotshaw, Andrew L. Sternberg, Dale Brewe, Steven C. Moss
Publikováno v:
IEEE Transactions on Nuclear Science. 65:478-485
We demonstrate the utility of focused, pulsed X-rays for investigating localized total ionizing dose effects in bipolar analog integrated circuits. Using the LM139 comparator as a test vehicle, we show how the technique can be used to identify the so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d227f645f211ba06470243918d39dd35
https://doi.org/10.1109/tns.2017.2780827
https://doi.org/10.1109/tns.2017.2780827
Autor:
Dale McMorrow, Michele Muschitiello, Travis J. Anderson, William T. Lotshaw, Andrew D. Koehler, Veronique Ferlet-Cavrois, Steven C. Moss, Ani Khachatrian, Dale Brewe, S. P. Buchner, S. D. LaLumondiere, Karl D. Hobart, Nicolas J.-H. Roche, Nathan P. Wells, E. C. Dillingham, Petras Karuza, J. P. Bonsall
Publikováno v:
IEEE Transactions on Nuclear Science. 64:97-105
A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al0.3Ga0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640035bfc24fa476dc61e5aa3f2cceb1
https://doi.org/10.1109/tns.2016.2641678
https://doi.org/10.1109/tns.2016.2641678
Autor:
Dmitry Veksler, Brendan Foran, Scott D. Sitzman, Zachary Lingley, J. P. Bonsall, Yongkun Sin, Miles Brodie
Publikováno v:
Gallium Nitride Materials and Devices XIV.
Leading GaN HEMT manufacturers have reported excellent RF power characteristics and encouraging reliability. However, long-term reliability in the space environment still remains a major concern due to a number of defects and traps as well as unknown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e9bc8b8e4872d58d06ce0742653edc
https://doi.org/10.1117/12.2507016
https://doi.org/10.1117/12.2507016
Autor:
Andrew D. Koehler, Steven C. Moss, Karl D. Hobart, E. C. Dillingham, Michael A. Tockstein, N. J-H. Roche, Travis J. Anderson, Ani Khachatrian, S. D. LaLumondiere, Dale McMorrow, Veronique Ferlet-Cavrois, Petras Karuza, J. P. Bonsall, M. Mushitiello, S. P. Buchner, Nathan P. Wells, Dale Brewe, William T. Lotshaw
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590dde5e13f99362b66680ff2c4696bc
https://doi.org/10.1109/radecs.2017.8696147
https://doi.org/10.1109/radecs.2017.8696147
Publikováno v:
SPIE Proceedings.
High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are finding an increasing number of commercial and military applications that require high voltage, high power, and high efficiency operation. In recent years, leading Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ee8d9d0404b75ce4d31f4c25f77e9cc
https://doi.org/10.1117/12.2250250
https://doi.org/10.1117/12.2250250
Autor:
Joseph S. Melinger, Nathan P. Wells, Petras Karuza, J. P. Bonsall, Dale Brewe, Andrew D. Koehler, Travis J. Anderson, Nicolas J.-H. Roche, Steven C. Moss, Stephen P. Buchner, E. C. Dillingham, William T. Lotshaw, Dale McMorrow, Paul D. Cunningham, Michael A. Tockstein, Jeffrey H. Warner, Ani Khachatrian, S. D. LaLumondiere
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Single Photon Absorption technique with ultraviolet pulsed laser and focused X-ray beam is used to investigate single event transients in pristine AlGaN/GaN Schottky-Gate and MIS-Gate HEMTs. The results depend strongly on structure of devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479596e81faaaa0f0187b06799686113
https://doi.org/10.1109/radecs.2016.8093196
https://doi.org/10.1109/radecs.2016.8093196