Zobrazeno 1 - 10
of 36
pro vyhledávání: '"J. P. Biersack"'
Autor:
A. Blass, J. P. Biersack
Publikováno v:
Radiation Effects and Defects in Solids. 153:103-114
We present a novel scheme for calculating electronic energy losses and their higher moments which allows to fully account for the electronic structure of solids. Typical structures in solid materials are found in metals with their half filled conduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ec04d6023c3be7310748347133936c
https://doi.org/10.1080/10420150108213264
https://doi.org/10.1080/10420150108213264
Publikováno v:
Radiation Effects and Defects in Solids. 145:213-223
SIMS (Secondary Ion Mass Spectroscopy) is extensively used in microelectronics in order to measure the depth profiles of dopants in silicon wafers. During the SIMS analysis, the sputtering ion beam induces several mass transport processes (collisiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34e567b0e184e1e26228c1896786d7ab
https://doi.org/10.1080/10420159808225765
https://doi.org/10.1080/10420159808225765
Autor:
Jose Fernando Diniz Chubaci, J. P. Biersack, Kiyoshi Ogata, Shigueo Watanabe, Fuminori Fujimoto
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 116:452-456
Increasing efforts have been reported on the formation of carbon nitride. Vapor deposition and simultaneous ion bombardment from accelerators or plasmas (IBAD) proved to be a successful technique for the preparation of this material. In our preparati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159b775da3ab431a9e6872bd4ae4ce84
https://doi.org/10.1016/0168-583x(96)00087-0
https://doi.org/10.1016/0168-583x(96)00087-0
Autor:
J. P. Biersack, P. Goppelt-Langer
Publikováno v:
Radiation Effects and Defects in Solids. 140:103-109
A new time-of-flight detector arrangement has been developed and optimised for elastic recoil detection analysis (ERDA). In contrast to other ERDA detectors, recoil masses are restricted to values below 40. Then incident ions in the mass range below
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b8a0ee8dd9e6bd8fb43f6da7de14b4
https://doi.org/10.1080/10420159608212944
https://doi.org/10.1080/10420159608212944
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1999-2004
Auger electron spectroscopy depth profiling was carried out on amorphous Ge–Si multilayer structures of 2 and 3 nm layer thicknesses using a dedicated Auger depth profiling instrument that rotates the specimen during sputtering and applies a grazin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6141686d1a5b499ca4841aca5c26d9ea
https://doi.org/10.1116/1.579643
https://doi.org/10.1116/1.579643
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2368-2372
Auger electron spectroscopy depth profiling was carried out on a Ge–Si multilayer structure using a rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0299b08200a2ef6ce88ae5fd044d5bfe
https://doi.org/10.1116/1.579216
https://doi.org/10.1116/1.579216
Autor:
Miklós Menyhárd, Arpad Barna, Kenneth Järrendahl, J. E. Sundgren, J. P. Biersack, Attila Sulyok
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:383-387
AES depth profiling was carried out on a Ge-Si multilayer structure using rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The dependence of the experimentally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::102afc042b216754cee82b5d7269715e
https://doi.org/10.1016/0168-583x(94)95849-1
https://doi.org/10.1016/0168-583x(94)95849-1
Publikováno v:
Radiation Effects and Defects in Solids. 127:349-355
The angular dependence of the physical sputtering yield of germanium bombarded by Ar ions has been studied at 23 keV and 30 keV. The sputtering yield increases with increasing incident angle and reaches a maximum around 70° to 75°. Results are comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6905ef164083f360068be6a6a0a98b2
https://doi.org/10.1080/10420159408221043
https://doi.org/10.1080/10420159408221043
Autor:
J. P. Biersack, S. T. Nakagawa, A. La Ferla, Alberto Carnera, G. Galvagno, Vito Raineri, Emanuele Rimini
Publikováno v:
Radiation Effects and Defects in Solids. 116:211-217
The profiles of boron ions impinging along the axis of silicon single crystal at energies in the 80–700 keV range were measured by SIMS. By a simple subtraction procedure the distributions for aligned incidence of the beam were decomposed into a ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf526a23a42577f2aa17c6d2a176b9e9
https://doi.org/10.1080/10420159108213109
https://doi.org/10.1080/10420159108213109
Autor:
H. H. Bertschat, H. E. Mahnke, R. Kowallik, Stefan Seeger, H. Haas, K. H. Biedermann, W. Müller, J. P. Biersack, W.-D. Zeitz
Publikováno v:
Physical Review Letters. 64:2695-2698
A pronounced difference in magnetic behavior at distinct lattice sites has been found for recoil-implanted 54 Fe ions in fcc cerium metal using the perturbed-angular-distribution method. Of the implanted ions 25(5)% show predominantly spin magnetism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daccb2cf9d3cadb297ff1d6d082301f9
https://doi.org/10.1103/physrevlett.64.2695
https://doi.org/10.1103/physrevlett.64.2695