Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon.

Autor: Jakob AM; School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia.; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia., Robson SG; School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia.; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia., Firgau HR; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia.; School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW, 2052, Australia., Mourik V; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia.; School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW, 2052, Australia., Schmitt V; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia.; School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW, 2052, Australia., Holmes D; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia.; School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW, 2052, Australia., Posselt M; Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328, Dresden, Saxony, Germany., Mayes ELH; RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne, Victoria, 3001, Australia., Spemann D; Leibniz-Institut für Oberflächenmodifizierung e.V., 04318, Leipzig, Saxony, Germany., McCallum JC; School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia.; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia., Morello A; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia.; School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW, 2052, Australia., Jamieson DN; School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia.; ARC Centre for Quantum Computation and Communication Technology (CQC2T), University of Technology Sydney, Sydney, NSW, 2007, Australia.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Oct; Vol. 36 (40), pp. e2405006. Date of Electronic Publication: 2024 Aug 29.

Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon

Autor: C. Montandon, J. P. Biersack, P. Pichler, A. Bourenkov, Lothar Frey

Publikováno v: Radiation Effects and Defects in Solids. 145:213-223

SIMS (Secondary Ion Mass Spectroscopy) is extensively used in microelectronics in order to measure the depth profiles of dopants in silicon wafers. During the SIMS analysis, the sputtering ion beam induces several mass transport processes (collisiona

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34e567b0e184e1e26228c1896786d7ab
https://doi.org/10.1080/10420159808225765

A compact position-sensitive time-of-flight detector for high-energy elastic recoil detection analysis

Autor: J. P. Biersack, P. Goppelt-Langer

Publikováno v: Radiation Effects and Defects in Solids. 140:103-109

A new time-of-flight detector arrangement has been developed and optimised for elastic recoil detection analysis (ERDA). In contrast to other ERDA detectors, recoil masses are restricted to values below 40. Then incident ions in the mass range below

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5b8a0ee8dd9e6bd8fb43f6da7de14b4
https://doi.org/10.1080/10420159608212944

Study of ion mixing during Auger electron spectroscopy depth profiling of Ge–Si multilayer system

Autor: Arpad Barna, Miklós Menyhárd, J. P. Biersack

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2368-2372

Auger electron spectroscopy depth profiling was carried out on a Ge–Si multilayer structure using a rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The depe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0299b08200a2ef6ce88ae5fd044d5bfe
https://doi.org/10.1116/1.579216

Angle of incidence variation of sputtering of germanium

Autor: D. Basu, Tapas Kumar Chini, Satyaranjan Bhattacharyya, J. P. Biersack

Publikováno v: Radiation Effects and Defects in Solids. 127:349-355

The angular dependence of the physical sputtering yield of germanium bombarded by Ar ions has been studied at 23 keV and 30 keV. The sputtering yield increases with increasing incident angle and reaches a maximum around 70° to 75°. Results are comp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6905ef164083f360068be6a6a0a98b2
https://doi.org/10.1080/10420159408221043