Zobrazeno 1 - 10
of 174
pro vyhledávání: '"J. Osvald"'
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Autor:
B. Zat'ko, A. Šagátová, N. Gál, A. Novák, J. Osvald, P. Boháček, Š. Polansky, J. Jakůbek, E. Kováčová
Publikováno v:
Journal of Instrumentation. 17:C12005
In this work, Schottky detectors based on a high-quality 4H-SiC epitaxial layer with a thickness of 50 µm were prepared. The Schottky contact of Ni/Au metallization with a 3 mm diameter was made. Reverse current-voltage characteristics were measured
Publikováno v:
Applied Surface Science. 461:206-211
We have prepared high temperature stable Schottky MOS diodes on AlGaN/GaN heterostructure with Ir-Al oxide based gate oxide layer and analyzed current transport mechanism in these diodes up to very high temperatures. The thermionic emission analysis
Autor:
František Dubecký, Mária Sekáčová, Bohumír Zaťko, Zdenko Zápražný, Pavol Boháček, Dušan Korytár, Vladimir A. Skuratov, K. Sedlackova, J. Osvald, A. Sagatova, Vladimír Nečas, L. Hrubčín
Publikováno v:
Applied Surface Science. 461:276-280
In this work we have focused on characterization of the surface barrier detectors on high quality 4H-SiC epitaxial layer. The thickness of the layer was 70 μm and the diameter of circular Au/Ni Schottky contact was 2 mm. The forward and the reverse
Publikováno v:
Materials Science in Semiconductor Processing. 140:106413
Autor:
J. Osvald
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 97:126-129
Influence of interface traps at Al2O3/(GaN)/AlGaN interface at low and high frequency on equivalent parallel conductance of Al2O3 /(GaN)/AlGaN/GaN heterostructure capacitor was studied. By the conductance measurements two types of traps were identifi
Publikováno v:
Microelectronics Reliability. 78:243-248
It is not in principle clear which of the capacitors forming a varactor is responsible for the capacitance change at the transition voltage. We analyzed a theoretical case of transition voltage of the varactor formed by ideal Schottky diodes. Since r
Autor:
J. Osvald
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 93:238-242
Influence of interface traps at Al2O3/(GaN)/AlGaN interface on low and high frequency capacitance of Al2O3/(GaN)/AlGaN/GaN heterostructure capacitor was studied. New features were observed in the capacitance curves. Obtained experimental results were
Autor:
L. Hrubčín, Bohumír Zaťko, Vladimír Nečas, Pavol Boháček, Mária Sekáčová, A. Sagatova, J. Osvald, Eva Kováčová
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and se
Autor:
J. Osvald
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
The objective of this contribution is to show that commonly used approach to assessment of the effective barrier height of inhomogeneous Schottky diodes which does not take into account a series resistance which is always present in real semiconducto