Zobrazeno 1 - 10
of 174
pro vyhledávání: '"J. Osvald"'
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee134e35152062f299179399b484534
https://doi.org/10.1109/asdam55965.2022.9966772
https://doi.org/10.1109/asdam55965.2022.9966772
Autor:
B. Zat'ko, A. Šagátová, N. Gál, A. Novák, J. Osvald, P. Boháček, Š. Polansky, J. Jakůbek, E. Kováčová
Publikováno v:
Journal of Instrumentation. 17:C12005
In this work, Schottky detectors based on a high-quality 4H-SiC epitaxial layer with a thickness of 50 µm were prepared. The Schottky contact of Ni/Au metallization with a 3 mm diameter was made. Reverse current-voltage characteristics were measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3163a9f6aa9e36803a00e8578ee59db6
https://doi.org/10.1088/1748-0221/17/12/c12005
https://doi.org/10.1088/1748-0221/17/12/c12005
Publikováno v:
Applied Surface Science. 461:206-211
We have prepared high temperature stable Schottky MOS diodes on AlGaN/GaN heterostructure with Ir-Al oxide based gate oxide layer and analyzed current transport mechanism in these diodes up to very high temperatures. The thermionic emission analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f392049e38800cec5f97ba4cbf488a24
https://doi.org/10.1016/j.apsusc.2018.06.113
https://doi.org/10.1016/j.apsusc.2018.06.113
Autor:
František Dubecký, Mária Sekáčová, Bohumír Zaťko, Zdenko Zápražný, Pavol Boháček, Dušan Korytár, Vladimir A. Skuratov, K. Sedlackova, J. Osvald, A. Sagatova, Vladimír Nečas, L. Hrubčín
Publikováno v:
Applied Surface Science. 461:276-280
In this work we have focused on characterization of the surface barrier detectors on high quality 4H-SiC epitaxial layer. The thickness of the layer was 70 μm and the diameter of circular Au/Ni Schottky contact was 2 mm. The forward and the reverse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b344ec5a5993aac8b3a9e8d0931f369
https://doi.org/10.1016/j.apsusc.2018.07.008
https://doi.org/10.1016/j.apsusc.2018.07.008
Publikováno v:
Materials Science in Semiconductor Processing. 140:106413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d95e9e624d98784c47cc3bd38e8a9bd
https://doi.org/10.1016/j.mssp.2021.106413
https://doi.org/10.1016/j.mssp.2021.106413
Autor:
J. Osvald
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 97:126-129
Influence of interface traps at Al2O3/(GaN)/AlGaN interface at low and high frequency on equivalent parallel conductance of Al2O3 /(GaN)/AlGaN/GaN heterostructure capacitor was studied. By the conductance measurements two types of traps were identifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b70a6c923af4264eae93d40d1aa2707
https://doi.org/10.1016/j.physe.2017.11.002
https://doi.org/10.1016/j.physe.2017.11.002
Publikováno v:
Microelectronics Reliability. 78:243-248
It is not in principle clear which of the capacitors forming a varactor is responsible for the capacitance change at the transition voltage. We analyzed a theoretical case of transition voltage of the varactor formed by ideal Schottky diodes. Since r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::614b310a02e9f6a0ed1fa6efe2c112d6
https://doi.org/10.1016/j.microrel.2017.09.004
https://doi.org/10.1016/j.microrel.2017.09.004
Autor:
J. Osvald
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 93:238-242
Influence of interface traps at Al2O3/(GaN)/AlGaN interface on low and high frequency capacitance of Al2O3/(GaN)/AlGaN/GaN heterostructure capacitor was studied. New features were observed in the capacitance curves. Obtained experimental results were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744a25150ea81594a9a5b71f770a2ed4
https://doi.org/10.1016/j.physe.2017.06.022
https://doi.org/10.1016/j.physe.2017.06.022
Autor:
L. Hrubčín, Bohumír Zaťko, Vladimír Nečas, Pavol Boháček, Mária Sekáčová, A. Sagatova, J. Osvald, Eva Kováčová
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26ab8334fed351324d7bcebc47816ecf
https://doi.org/10.1063/1.5119507
https://doi.org/10.1063/1.5119507
Autor:
Bohumír Zaťko, Sergey V. Rozov, Yuriy Halahovets, Eva Kováčová, J. Osvald, A. Sagatova, L. Hrubčín, Pavol Boháček, V.G. Sandukovskij
Publikováno v:
Applied Surface Science. 536:147801
Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef086b70d5d2b2c45ba48f5edf7175a5
https://doi.org/10.1016/j.apsusc.2020.147801
https://doi.org/10.1016/j.apsusc.2020.147801