Zobrazeno 1 - 10
of 40
pro vyhledávání: '"J. O. Olowolafe"'
Publikováno v:
Thin Solid Films. 479:59-63
The role of silicon and boron carbide interface layers on thermal stability and electrical properties of tantalum, gold, and nickel contacts to 6H- and 4H-n-silicon carbide are presented in this report. Thin Ta/Si, Au/B 4 C, and Ni/B 4 C layers were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03c0e34b4740b2de7f3146f132f5fa2
https://doi.org/10.1016/j.tsf.2004.11.188
https://doi.org/10.1016/j.tsf.2004.11.188
Publikováno v:
Journal of Electronic Materials. 29:391-397
We present our results on the role of Si or Al interface layers on the structure and electrical properties of tantalum and molybdenum contacts to p-type 6H-SiC. Thin films of Ta or Mo were deposited on p-type SiC with and without p-doped Si or Al int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2335d53d3bccc7ba30bc1632f4b93f80
https://doi.org/10.1007/s11664-000-0083-7
https://doi.org/10.1007/s11664-000-0083-7
Autor:
J. O. Olowolafe, Yuan Chen, Guohua Qui, Enam Chowdhury, James Kolodzey, Thomas N. Adam, John S. Suehle, I. Rau
Publikováno v:
IEEE Transactions on Electron Devices. 47:121-128
Leakage currents and dielectric breakdown were studied in MIS capacitors of metal-aluminum oxide-silicon. The aluminum oxide was produced by thermally oxidizing AlN at 800-1160/spl deg/C under dry O/sub 2/ conditions. The AlN films were deposited by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0124a999eda42df33bfd0608630c1a3f
https://doi.org/10.1109/16.817577
https://doi.org/10.1109/16.817577
Publikováno v:
Journal of Electronic Materials. 28:1399-1402
The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1aaabe612dd58778b9728b901d4c557
https://doi.org/10.1007/s11664-999-0129-4
https://doi.org/10.1007/s11664-999-0129-4
Publikováno v:
IEEE Transactions on Magnetics. 35:356-360
High-power and temperature pulsed-power electronics can be exploited by future military combat systems using advanced electric weapon concepts such as electrothermal-chemical (ETC) and electromagnetic (EM) gun technologies. The results of experiments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c4ba204b3f2206e0bfd3701f5d6f0d0
https://doi.org/10.1109/20.738431
https://doi.org/10.1109/20.738431
Autor:
Enam Chowdhury, R. Jonczyk, Karl Unruh, Douglas Smith, J. O. Olowolafe, John S. Suehle, M. W. Dashiell, James Kolodzey, Yuan Chen, A. Barnett, G. Qiu, Charles P. Swann
Publikováno v:
Journal of Electronic Materials. 27:918-922
We report on the properties of a novel insulator, AlO:N for application in semiconductors produced by thermally oxidizing AlN thin films. The process steps were similar to those used for SiO2, creating the possibility of a new technology for metal-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea282848a0cefe2830aad20c286d516
https://doi.org/10.1007/s11664-998-0119-y
https://doi.org/10.1007/s11664-998-0119-y
Autor:
M. W. Dashiell, A.-S. Khan, James Kolodzey, R. T. Troeger, B. A. Orner, Kristofer Roe, R. G. Wilson, J. O. Olowolafe, Paul R. Berger
Publikováno v:
Thin Solid Films. 321:47-50
In situ n-type doping was investigated for Ge1 - yCy/Si heteroepitaxial layers (y~0.001) for a potential optoelectronic material compatible with Si. Using a solid GaP sublimation source for phosphorus doping, epitaxial Ge1 - yCy films were in situ do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e03f37fa49c44ec452a8c2c18e48346
https://doi.org/10.1016/s0040-6090(98)00441-6
https://doi.org/10.1016/s0040-6090(98)00441-6
Autor:
F. Pintchovski, J. P. Stark, J. O. Olowolafe, C. C. Lee, D. Jawarani, Hisao Kawasaki, J. Klein
Publikováno v:
Journal of The Electrochemical Society. 141:302-306
Intermetallic compound formation in Ti/Al alloy and TiN/Al alloy thin-film couples has a strong influence on the electromigration lifetime of Al alloy interconnects used in integrated circuits. The morphologies and types of this compound are investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::987da8c8f16d0e6e551fbfb9959eb94f
https://doi.org/10.1149/1.2054705
https://doi.org/10.1149/1.2054705
Publikováno v:
Thin Solid Films. 227:37-43
Using Auger electron spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy and sheet resistance measurements the properties of sputtered thin film Ta, Ti and TiW as humidity-induced corrosion barriers f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d9b68146b6329f9f6fb69315dca2b1
https://doi.org/10.1016/0040-6090(93)90184-q
https://doi.org/10.1016/0040-6090(93)90184-q
Publikováno v:
Journal of Applied Physics. 73:1764-1772
Using x‐ray diffraction, Rutherford backscattering spectrometry, Auger electron spectroscopy, and scanning electron microscopy, effects of ambient anneal and Pt thickness on the interdiffusion of Pt/Ti bilayers deposited on SiO2/Si and on reactivel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00bab1b87458453d5ea1dc2e52cee9af
https://doi.org/10.1063/1.353212
https://doi.org/10.1063/1.353212