Zobrazeno 1 - 4
of 4
pro vyhledávání: '"J. O. Borland"'
Autor:
Eric Chason, O. W. Holland, J. M. Poate, James W. Mayer, Michael I. Current, Charles W. Magee, S. T. Picraux, Al F. Tasch, John Melngailis, Mark E. Law, T. Diaz de la Rubia, J. O. Borland, D. J. Eaglesham
Publikováno v:
Journal of Applied Physics. 81:6513-6561
General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2d24832e8568c10a8e433c4b649d24
https://doi.org/10.1063/1.365193
https://doi.org/10.1063/1.365193
Autor:
K. Nummy, V. J. Silvestri, R. Bendernagel, J. Hann, V. T. Phan, D. Kerr, J. O. Borland, P. Ronsheim
Publikováno v:
Journal of The Electrochemical Society. 137:2323-2327
ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850 o C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c6b97bd51aa803c305b22af27c1766
https://doi.org/10.1149/1.2086935
https://doi.org/10.1149/1.2086935
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96c90d6ee939207beb77951f2776ecd6
https://doi.org/10.7567/ssdm.1993.s-ii-2
https://doi.org/10.7567/ssdm.1993.s-ii-2
Autor:
J. O. Borland, D. Kerr, V. J. Silvestri, K. Nummy, R. Bendernagel, J. Hann, V. T. Phan, P. Ronsheim
Publikováno v:
ChemInform. 21
ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850 o C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc79947a867886c90c413bc9e566a4c
https://doi.org/10.1002/chin.199037341
https://doi.org/10.1002/chin.199037341