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Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates

Autor: C.-P. Kwan, M. Street, A. Mahmood, W. Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, U. Singisetti, Ch. Binek, J. P. Bird

Publikováno v: AIP Advances, Vol 9, Iss 5, Pp 055018-055018-7 (2019)

We study temperature dependent (200 – 400 K) dielectric current leakage in high-quality, epitaxial chromia films, synthesized on various conductive substrates (Pd, Pt and V2O3). We find that trap-assisted space-charge limited conduction is the domi

Externí odkaz: https://doaj.org/article/d1b44cc515bb4324b8fc1a539f176f62

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Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence

Autor: G. He, Jonas Fransson, H. Ramamoorthy, J. Nathawat, N. Arabchigavkani, Minzhi Zhao, C-P Kwan, B. Barut, Jonathan P. Bird, Zhiwen Jin, R. Somphonsane, S. Yin

Publikováno v: Scientific Reports, Vol 10, Iss 1, Pp 1-13 (2020)
Scientific Reports

The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90031eae3b1131f5c93080e8f0f72f90
http://link.springer.com/article/10.1038/s41598-020-62313-3

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Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors

Autor: B. Barut, J.G. Gluschke, Jonathan P. Bird, Michael Randle, N. Arabchigavkani, J. Nathawat, R. Dixit, Keke He, Adam P. Micolich, C.-P. Kwan, S. Yin

Publikováno v: ACS Applied Electronic Materials. 1:2260-2267

We fabricated graphene field-effect transistors (GFETs) with hybrid organic/inorganic gate dielectrics, in which parylene C is used as the organic component. The HOMO–LUMO gap of parylene is large ...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec20d2e8066019c563495c5ba1f69fe2
https://doi.org/10.1021/acsaelm.9b00467

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Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Autor: H. Ramamoorthy, Jonathan P. Bird, G. He, Michio Kida, Gil-Ho Kim, C.-P. Kwan, Kohei Sakanashi, Naoki Matsumoto, R. Somphonsane, Miao Zhao, Yunseob Kim, Nobuyuki Aoki, Takashi Taniguchi, S. Yin, Zhi Jin, Kenji Watanabe, J. Nathawat, N. Arabchigavkani, Michael Randle

Publikováno v: ACS Omega, Vol 4, Iss 2, Pp 4082-4090 (2019)
ACS Omega

We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more sta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50d0cdf883c97935b8c990cb9bf7f70
https://doaj.org/article/0f9f3da6bd324b7eac40a24b0369ad72

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Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors

Autor: R. Dixit, Maria C. Asensio, Jonathan P. Bird, Takeshi Komesu, B. Barut, C.-P. Kwan, N. Arabchigavkani, Michael Randle, Alexey Lipatov, Peter A. Dowben, Avinash Kumar, S. Yin, José Avila, Uttam Singisetti, Keke He, Alexander Sinitskii, J. Nathawat

Publikováno v: ACS Nano. 13:803-811

We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88646017ec01377b29117837acd836ae
https://doi.org/10.1021/acsnano.8b08260

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Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene

Autor: B. Barut, Nobuyuki Aoki, Peter A. Dowben, H. Ramamoorthy, G. He, N. Arabchigavkani, R. Somphonsane, Jonathan P. Bird, Michael Randle, R. Dixit, J. Nathawat, S. Yin, Kohei Sakanashi, Wai-Ning Mei, Keke He, Jonas Fransson, Kechun Zhang, Liu-Jun Wang

Publikováno v: Physical review letters. 126(8)

Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this unive

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::749137edb4d47d371c14a2c3bdddc3e0
https://pubmed.ncbi.nlm.nih.gov/33709762

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Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS2

Autor: R. Dixit, Eric Pop, B. Barut, Christopher D. English, J. Nathawat, Michael Randle, Keke He, N. Arabchigavkani, Kirby K. H. Smithe, S. Yin, Jonathan P. Bird

Publikováno v: Physical Review Materials. 4

Drift velocity saturation (at some characteristic value, ${v}_{d}^{\mathrm{sat}}$) is a critical process that limits the ultimate current-carrying capacity of semiconductors at high electric fields $(\ensuremath{\sim}{10}^{4}\phantom{\rule{0.16em}{0e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::107b8a4adee160e2e6f215bbd243d452
https://doi.org/10.1103/physrevmaterials.4.014002

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