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Autor:
A. N. Klyui, J. N. Sveshnikov, Nickolai I. Klyui, B. A. Danilchenko, Alexander Belyaev, A. N. Lukyanov, R. V. Konakova
Publikováno v:
Semiconductors. 46:302-305
Experimental data on the electroreflectance spectra of γ-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 105−2 × 106 rad. The theoretical electroreflectance spectra calculated on the basis of a model of three ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92eaab303f491aad41a52a42f0b68916
https://doi.org/10.1134/s1063782612030062
https://doi.org/10.1134/s1063782612030062
