Zobrazeno 1 - 2
of 2
pro vyhledávání: '"J. N. Gaspar-Angeles"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 464-468 (2021)
The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use i
Externí odkaz:
https://doaj.org/article/6ed8c638eb434057bc8691b14827a39f
Autor:
J. N. Gaspar-Angeles, Magali Estrada, Antonio Cerdeira, Y. Hernandez-Barrios, Benjamin Iniguez
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
A full capacitance model for amorphous oxide semiconductors Thin Film Transistors (AOSTFTs) is validated in dynamic regime using a Ring Oscillator of 19 stages fabricated and measured, describing the model in Verilog-A language. In this paper, we obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f1b7ad14f9c3f7563b67e7a8703241
https://doi.org/10.1109/laedc49063.2020.9073254
https://doi.org/10.1109/laedc49063.2020.9073254