Zobrazeno 1 - 10
of 56
pro vyhledávání: '"J. Moeyaert"'
Autor:
H. Mehdi, M. Martin, C. Jany, L. Virot, J. M. Hartmann, J. Da Fonseca, J. Moeyaert, P. Gaillard, J. Coignus, C. Leroux, C. Licitra, B. Salem, T. Baron
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
Near infrared light detection is fundamental for sensing in various application fields. In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si
Externí odkaz:
https://doaj.org/article/447f62d06e7b4df49a42f1405facc845
Autor:
H. Mehdi, M. Martin, S. David, J. M. Hartmann, J. Moeyaert, M. L. Touraton, C. Jany, L. Virot, J. Da Fonseca, J. Coignus, D. Blachier, T. Baron
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125204-125204-6 (2020)
Vertical GaAs p–i–n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodetectors were investigated as a function of threading dislocation density in the stacks. A low dark
Externí odkaz:
https://doaj.org/article/a299e05da93a4988ae3745c8e7d0fe9a
Autor:
S. David, J. Roque, N. Rochat, N. Bernier, L. Piot, R. Alcotte, T. Cerba, M. Martin, J. Moeyaert, Y. Bogumilowizc, S. Arnaud, F. Bertin, F. Bassani, T. Baron
Publikováno v:
APL Materials, Vol 4, Iss 5, Pp 056102-056102-6 (2016)
Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron micr
Externí odkaz:
https://doaj.org/article/f189a257dbdf4a4b8133f8f6b1b4c9f5
Autor:
R. Alcotte, M. Martin, J. Moeyaert, R. Cipro, S. David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sanchez, Z. Ye, X. Y. Bao, J. B. Pin, T. Baron
Publikováno v:
APL Materials, Vol 4, Iss 4, Pp 046101-046101-6 (2016)
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperatu
Externí odkaz:
https://doaj.org/article/b57d9be9181d480fb9c632881acc3157
Autor:
P. Gaillard, A. Ndiaye, B. Ben Bakir, P. Le Maitre, J. Da Fonseca, J. M. Hartmann, M. Martin, J. Moeyaert, H. Mehdi, T. Baron, C. Jany
Publikováno v:
IEEE Photonics Technology Letters. 35:101-104
Autor:
Mickael Martin, Farzan Gity, J. Moeyaert, Bérangère Hyot, Thierry Baron, Paul K. Hurley, Shubhadeep Bhattacharjee, Hanako Okuno, Denis Rouchon, Pauline Hauchecorne
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, American Chemical Society, 2021, 4 (8), pp.7820-7831. ⟨10.1021/acsanm.1c01141⟩
ACS Applied Nano Materials, 2021, 4 (8), pp.7820-7831. ⟨10.1021/acsanm.1c01141⟩
ACS Applied Nano Materials, American Chemical Society, 2021, 4 (8), pp.7820-7831. ⟨10.1021/acsanm.1c01141⟩
ACS Applied Nano Materials, 2021, 4 (8), pp.7820-7831. ⟨10.1021/acsanm.1c01141⟩
International audience; Layered semiconductor gallium selenide (GaSe) is considered a potential candidate for optoelectronic applications because of its direct band gap. Monocrystalline material is, however, a prerequisite to fully exploit these prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cbe0f042da206434848b4b8b5e715d6
https://hal.univ-grenoble-alpes.fr/hal-03454191
https://hal.univ-grenoble-alpes.fr/hal-03454191
Autor:
Léopold Virot, Mickael Martin, Christophe Licitra, J. Da Fonseca, P. Gaillard, Christophe Jany, J. Coignus, J.M. Hartmann, Thierry Baron, J. Moeyaert, Hussein Mehdi, Charles Leroux, Bassem Salem
Publikováno v:
AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
AIP Advances, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
AIP Advances, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
Near infrared light detection is fundamental for sensing in various application fields. In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20530fb56580d0422a0a7005c4ce3a24
https://hal.univ-grenoble-alpes.fr/hal-03449032
https://hal.univ-grenoble-alpes.fr/hal-03449032
Autor:
J. Moeyaert, Sylvain David, Névine Rochat, Mickael Martin, Christophe Jany, Marie-Leonor Touraton, Nicolas Bernier, Frederic Boeuf, Thierry Baron, Virginie Loup, Didier Dutartre
Publikováno v:
Thin Solid Films
Thin Solid Films, 2021, 721, pp.138541. ⟨10.1016/j.tsf.2021.138541⟩
Thin Solid Films, 2021, 721, pp.138541. ⟨10.1016/j.tsf.2021.138541⟩
Metal organic chemical vapor deposition of AlGaAs on GaAs on nominal 300 mm (001) Si was studied using selective epitaxial growth. Growth and structural characterization of AlGaAs layers formed on GaAs structures is presented. AlGaAs layers with diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6c1f9a29df45d83252511ebe2b7e44e
https://hal.univ-grenoble-alpes.fr/hal-03867639/file/S0040609021000249.pdf
https://hal.univ-grenoble-alpes.fr/hal-03867639/file/S0040609021000249.pdf
Autor:
Thierry Baron, D. Deleruyelle, P.V. Guenery, Serge Blonkowski, Abdelkader Souifi, L. Militaru, J. Moeyaert, Khaled Ayadi, E. A. Leon Perez, Nicolas Baboux
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Solid-State Electronics, Elsevier, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
In this work we report on the integration of indium oxide (In2O3) nanoparticles (NPs) for Resistive Random Access Memory (RRAM) applications. This low-temperature integration process is fully compatible CMOS Back-End integration given a carefull sele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::731be2b61c72b31c3e267217d1e297cc
https://hal.archives-ouvertes.fr/hal-03116248
https://hal.archives-ouvertes.fr/hal-03116248
Autor:
Denis Morris, Mickael Martin, Abdelkader Souifi, Jean-Michel Hartmann, Hussein Mehdi, Abdelaziz Ahaitouf, Thierry Baron, Nicolas Chauvin, J. Moeyaert, Bouraoui Ilahi, Bassem Salem, Ali Ahaitouf, Sylvain David, Oumaima Abouzaid
Publikováno v:
Nanomaterials
Nanomaterials, MDPI, 2020, 10 (12), pp.2450. ⟨10.3390/nano10122450⟩
Volume 10
Issue 12
Nanomaterials, Vol 10, Iss 2450, p 2450 (2020)
Nanomaterials, 2020, 10 (12), pp.2450. ⟨10.3390/nano10122450⟩
Nanomaterials, MDPI, 2020, 10 (12), pp.2450. ⟨10.3390/nano10122450⟩
Volume 10
Issue 12
Nanomaterials, Vol 10, Iss 2450, p 2450 (2020)
Nanomaterials, 2020, 10 (12), pp.2450. ⟨10.3390/nano10122450⟩
The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33724faa3a750904ecbf1d125bd650ca
https://hal.archives-ouvertes.fr/hal-03185296
https://hal.archives-ouvertes.fr/hal-03185296