Zobrazeno 1 - 10
of 79
pro vyhledávání: '"J. Mirecki Millunchick"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 28:1175-1180
Thin films of InxGa1−xAs are observed to develop either islands or pits on the surface to relieve lattice mismatch strain after some critical thickness depending on the composition of the film. The composition is thought to alter either the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe6d35f31cddacc132265b26990c2dd
https://doi.org/10.1116/1.3474982
https://doi.org/10.1116/1.3474982
Publikováno v:
Surface Science. 603:14-21
We examine the Sb incorporation and resulting surface reconstructions of Sb and GaSb deposited on GaAs(0 0 1). These films exhibit a mixed surface reconstruction of α2(2 × 4) and α(4 × 3). Initially, Sb reacts with Ga on the surface to form 2D is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b508ce8115f2f9b8e059f7ac2ba471
https://doi.org/10.1016/j.susc.2008.09.042
https://doi.org/10.1016/j.susc.2008.09.042
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:2041-2048
In vacuo scanning tunneling microscopy is used to investigate the surface reconstructions of pseudomorphic InGaAs alloys at intermediate values of compressive strain. The coverage of different reconstructions varies with film thickness, concomitant w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95c35b8368307dd3386c7bbe4e6e519
https://doi.org/10.1116/1.2345646
https://doi.org/10.1116/1.2345646
Publikováno v:
Journal of Crystal Growth. 283:8-14
We discuss the development and optimization of lateral composition modulation in GaAsSb multilayer structures. Multilayers of this material system must be grown in strain balance with respect to the substrate in order to maintain regular composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422856efeb156b010cce727b50485a35
https://doi.org/10.1016/j.jcrysgro.2005.04.111
https://doi.org/10.1016/j.jcrysgro.2005.04.111
Publikováno v:
Journal of Crystal Growth. 264:64-69
The mechanisms for stress relaxation have been investigated during growth of InGaAs/GaAs heterostructures in a regime where misfit dislocations and surface morphology strongly interact. Real time stress evolution was obtained using an in situ multi-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e5ee735376a508722868530232cb53
https://doi.org/10.1016/j.jcrysgro.2003.12.053
https://doi.org/10.1016/j.jcrysgro.2003.12.053
Publikováno v:
Surface Science. 550:1-7
The atomic surface structures of InGaAs lattice-matched and 1.9% compressively strained alloys were examined using in situ scanning tunneling microscopy. The surface of the lattice-matched films is comprised of an anion-rich but mixed-termination (4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebc1c57a86d488dc32c88f6f0666b6af
https://doi.org/10.1016/j.susc.2004.01.003
https://doi.org/10.1016/j.susc.2004.01.003
Publikováno v:
Journal of Applied Physics. 94:1667-1675
Lateral composition modulation on the group V sublattice has been investigated in GaAs/GaSb short period superlattices. The effect of As species and growth temperature on the appearance of lateral composition modulation was studied. Cross-sectional t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6290464d1d11a868162085470539c3f8
https://doi.org/10.1063/1.1591419
https://doi.org/10.1063/1.1591419
Publikováno v:
Surface Science. 525:222-228
Pit nucleation during the growth of In 0.27 Ga 0.73 As/GaAs compressively strained films was investigated under various growth conditions. In this system, pit nucleation occurs after the nucleation of three-dimensional islands, but prior to the forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a5209d9907c916356e41cc48ce7685
https://doi.org/10.1016/s0039-6028(02)02563-3
https://doi.org/10.1016/s0039-6028(02)02563-3
Publikováno v:
Journal of Crystal Growth. 236:563-571
The nucleation of pits is shown to be an additional mechanism by which films roughen to relieve strain. We discuss the morphological evolution of moderately strained InGaAs/GaAs (lattice mismatch f≈2%) as a function of growth conditions. We show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eae045638d5d306dec6a54caad84ffa
https://doi.org/10.1016/s0022-0248(02)00862-x
https://doi.org/10.1016/s0022-0248(02)00862-x
Autor:
M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7, 9, M. Burghammer 8, A. Tagliaferri 7, S. Sanguinetti 2
Publikováno v:
Nanotechnology (Bristol, Online) 25 (2014): 205301-7. doi:10.1088/0957-4484/25/20/205301
info:cnr-pdr/source/autori:M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7,9, M. Burghammer 8, A. Tagliaferri 7 and S. Sanguinetti 2/titolo:Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates/doi:10.1088%2F0957-4484%2F25%2F20%2F205301/rivista:Nanotechnology (Bristol, Online)/anno:2014/pagina_da:205301-7/pagina_a:/intervallo_pagine:205301-7/volume:25
info:cnr-pdr/source/autori:M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7,9, M. Burghammer 8, A. Tagliaferri 7 and S. Sanguinetti 2/titolo:Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates/doi:10.1088%2F0957-4484%2F25%2F20%2F205301/rivista:Nanotechnology (Bristol, Online)/anno:2014/pagina_da:205301-7/pagina_a:/intervallo_pagine:205301-7/volume:25
We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e786cd31250ceccca3a1e727eee0d9b
http://hdl.handle.net/10281/53265
http://hdl.handle.net/10281/53265
