Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates

Autor: M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7, 9, M. Burghammer 8, A. Tagliaferri 7, S. Sanguinetti 2

Publikováno v: Nanotechnology (Bristol, Online) 25 (2014): 205301-7. doi:10.1088/0957-4484/25/20/205301
info:cnr-pdr/source/autori:M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7,9, M. Burghammer 8, A. Tagliaferri 7 and S. Sanguinetti 2/titolo:Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates/doi:10.1088%2F0957-4484%2F25%2F20%2F205301/rivista:Nanotechnology (Bristol, Online)/anno:2014/pagina_da:205301-7/pagina_a:/intervallo_pagine:205301-7/volume:25

We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e786cd31250ceccca3a1e727eee0d9b
http://hdl.handle.net/10281/53265

Sb incorporation at GaAs(001)-(2×4) surfaces

Autor: J.E. Bickel, J. Mirecki Millunchick, Chris Pearson

Publikováno v: Surface Science. 603:14-21

We examine the Sb incorporation and resulting surface reconstructions of Sb and GaSb deposited on GaAs(0 0 1). These films exhibit a mixed surface reconstruction of α2(2 × 4) and α(4 × 3). Initially, Sb reacts with Ga on the surface to form 2D is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30b508ce8115f2f9b8e059f7ac2ba471
https://doi.org/10.1016/j.susc.2008.09.042

Engineering lateral composition modulation in GaAsSb multilayers

Autor: J. Mirecki Millunchick, C. Dorin, Chris Pearson, C. Wauchope

Publikováno v: Journal of Crystal Growth. 283:8-14

We discuss the development and optimization of lateral composition modulation in GaAsSb multilayer structures. Multilayers of this material system must be grown in strain balance with respect to the substrate in order to maintain regular composition

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::422856efeb156b010cce727b50485a35
https://doi.org/10.1016/j.jcrysgro.2005.04.111

Surface reconstructions of InGaAs alloys

Autor: B.J. Dall, A. Riposan, B. G. Orr, Chris Pearson, J. Mirecki Millunchick

Publikováno v: Surface Science. 550:1-7

The atomic surface structures of InGaAs lattice-matched and 1.9% compressively strained alloys were examined using in situ scanning tunneling microscopy. The surface of the lattice-matched films is comprised of an anion-rich but mixed-termination (4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebc1c57a86d488dc32c88f6f0666b6af
https://doi.org/10.1016/j.susc.2004.01.003

The effect of island density on pit nucleation in In0.27Ga0.73As/GaAs films

Autor: G.K.M. Martin, Michael L. Falk, A. Riposan, J. Mirecki Millunchick, M. Bouville

Publikováno v: Surface Science. 525:222-228

Pit nucleation during the growth of In 0.27 Ga 0.73 As/GaAs compressively strained films was investigated under various growth conditions. In this system, pit nucleation occurs after the nucleation of three-dimensional islands, but prior to the forma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02a5209d9907c916356e41cc48ce7685
https://doi.org/10.1016/s0039-6028(02)02563-3