Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J. Minghuang Hong"'
Autor:
Gou-Chung Chi, Huang-Chung Cheng, J. D. Guo, Chia-Feng Lin, J. Minghuang Hong, Ming-Shiann Feng, Chin-Yuan Chen
Publikováno v:
Journal of Applied Physics. 82:2378-2382
High quality GaN epitaxial layers were grown on 6H–SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period GaN/Al0.08Ga0.92N (100 A/100 A) as a buffer layer produce a good quality GaN epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8cf154aa8fe7b922a26ba989216807d
https://doi.org/10.1063/1.366048
https://doi.org/10.1063/1.366048
Publikováno v:
Journal of Applied Physics. 74:3099-3102
We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5×1013 to 1×1016 ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad477d14ebcfa623f74f40a546e63ca1
https://doi.org/10.1063/1.354575
https://doi.org/10.1063/1.354575
Autor:
Chia-Hung Hsu, Wen Hsin Chang, J. Raynien Kwo, Pen Chang, Chih Hsun Lee, Yi Jun Lee, J. Minghuang Hong, Minghwei Hong, Chiung Chi Tsai, Yao Chung Chang, M. L. Huang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 21(48)
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2001a79f48f95822d8846c320fefc164
https://pubmed.ncbi.nlm.nih.gov/25378271
https://pubmed.ncbi.nlm.nih.gov/25378271
Publikováno v:
Applied Physics Letters. 68:3758-3760
The GaN buffer layer was grown on the sapphire substrate by low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD) at 525 °C. The following 1.3 μm epitaxial GaN growth was carried out at 1025 °C. We varied the ramping rate from 12.5 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081a8ce41c69495b0dab1631175f4f1c
https://doi.org/10.1063/1.115997
https://doi.org/10.1063/1.115997
Publikováno v:
Electronics Letters. 21:1138
The GaAs-AlGaAs double-heterostructure interferometric lasers were successfully grown by molecular beam epitaxy on [011]-oriented-stepped-channelled GaAs(100) substrates. These lasers have a side-mode suppression ratio of greater than 200:1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ab3d0c07343a834efce4749e6e1e673
https://doi.org/10.1049/el:19850806
https://doi.org/10.1049/el:19850806