Zobrazeno 1 - 10
of 111
pro vyhledávání: '"J. Mimila-Arroyo"'
Publikováno v:
Materials Science and Engineering: B. 290:116279
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4026de1cb65b8ae5321a412cfe938642
https://doi.org/10.1016/j.mseb.2023.116279
https://doi.org/10.1016/j.mseb.2023.116279
Autor:
J. Mimila-Arroyo, A.S. Arreola-Pina
Publikováno v:
Materials Science in Semiconductor Processing. 123:105482
The reliability of the deuterated AlGaN/GaN High Electron Mobility Transistor (HEMT), which has an improved performance due to the deuterium passivation of point and extended defects, has been studied and compared to that of as-grown (non-deuterated)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c05cb8d88f652f770bdb9fb96b07156
https://doi.org/10.1016/j.mssp.2020.105482
https://doi.org/10.1016/j.mssp.2020.105482
Autor:
J. Mimila-Arroyo
Publikováno v:
The Review of scientific instruments. 88(6)
In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc0bebd48626c1e419d82c955da82c1e
https://pubmed.ncbi.nlm.nih.gov/28667996
https://pubmed.ncbi.nlm.nih.gov/28667996
Autor:
J. Mimila-Arroyo
Publikováno v:
Semiconductor Science and Technology. 34:065019
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28af2c4f452b3f7059bdf9dfd45f524f
https://doi.org/10.1088/1361-6641/ab1d20
https://doi.org/10.1088/1361-6641/ab1d20
Publikováno v:
Materials Science and Engineering: B. 177:1487-1490
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fd5f9aedf363fe0dd44546337f4dfa2
https://doi.org/10.1016/j.mseb.2012.02.013
https://doi.org/10.1016/j.mseb.2012.02.013
Akademický článek
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Autor:
J. Mimila-Arroyo
Publikováno v:
physica status solidi c. 4:1560-1565
The GaInP/GaAs heterojunction bipolar transistor energy band gap close to the junction is determined through the behavior of its collector and base currents and current gain as a function of the temperature. It results that the emitter-base junction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6eaa6dbc805e47034029eb2f1f57909
https://doi.org/10.1002/pssc.200674116
https://doi.org/10.1002/pssc.200674116
Autor:
V. Cabrera-Arenas, J. Mimila-Arroyo
Publikováno v:
physica status solidi (b). 242:1937-1941
The evolution of the base current of GaInP/GaAs Heterojunction Bipolar Transistors (HBTs) is studied as a function of the stressing current during the burn-in. It is found that the base current decreases in an exponential way with the involved time c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678abbe33ea7fca3c0f6dac29927775d
https://doi.org/10.1002/pssb.200461829
https://doi.org/10.1002/pssb.200461829
Publikováno v:
Microelectronics Journal. 35:577-580
Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been observed in all of the layers with deposition temperature-dependent concentration. On the GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd8bf5e3fd61bea4c9a409d45d8c8e7
https://doi.org/10.1016/j.mejo.2004.03.002
https://doi.org/10.1016/j.mejo.2004.03.002
Autor:
Ouri Gorochov, Pierre Galtier, François Jomard, G. Amiri, Y. Marfaing, Vincent Sallet, J. Mimila-Arroyo, L. Svob, J. F. Rommeluère, Alain Lusson
Publikováno v:
physica status solidi (c). 1:904-907
The incorporation of nitrogen as an acceptor in ZnO has been investigated in several ways. First, the growth parameters which allow achieving the lowest residual n type conductivity on undoped samples have been investigated. Second, nitrogen was intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::577cd1ed9c5b2dd103289554505645a1
https://doi.org/10.1002/pssc.200304251
https://doi.org/10.1002/pssc.200304251