Zobrazeno 1 - 4
of 4
pro vyhledávání: '"J. Mc Cullen"'
Autor:
Paul A. Hyde, Richard Q. Williams, Jonghae Kim, W. Clark, V. Karam, B.J. Gross, Jean-Olivier Plouchart, Robert Trzcinski, Kun Wu, Myung-Hee Na, J. Mc Cullen
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
This paper reports the SOI 90 nm statistical model to hardware correlation achieved over a broad voltage, temperature and a variety of five different ring oscillators. Monte Carlo simulations were performed and compared with the measured circuit stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984165a78ca46309da00bcf41234fdf8
https://doi.org/10.1109/iedm.2005.1609540
https://doi.org/10.1109/iedm.2005.1609540
Autor:
Lotersztajn, Sophie1 sophie.lotersztajn@im3.inserm.fr, Julien, Boris1 boris.julien@im3.inserm.fr, Teixeira-Clerc, Fatima1 fatima.clerc@im3.inserm.fr, Grenard, Pascale1 pascale.grenard@im3.inserm.fr, Mallat, Ariane1,2 ariane.mallat@hmn.ap-hop-paris.fr
Publikováno v:
Annual Review of Pharmacology & Toxicology. 2005, Vol. 45 Issue 1, p605-628. 24p. 1 Diagram, 1 Chart.
Autor:
Candelaria, J.
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, pII-III, 2p
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, pi-I, 1p