Zobrazeno 1 - 10
of 568
pro vyhledávání: '"J. Massies"'
Autor:
P. -M Coulon, B Damilano, B Alloing, S Walde, J Enslin, G Kusch, P Chausse, S Vézian, S Hagedorn, T Wernicke, J Massies, J Zúñiga-Pérez, M Weyers, M Kneissl, C Trager-Cowan, R W Martin, P A Shields
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4089b646e8872cb1035de6d2ed3811e3
Measurements are reported of frequency- and temperature-dependent cyclotron resonance in the ternary alloy GaxIn1-xAs, close to its lattice match with InP. The band-edge effective mass is found to be 0.041 m0 for x=0.47, in agreement with earlier mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddf613d9af5f9caa7c5ccba0c8ece2d0
https://ora.ox.ac.uk/objects/uuid:31d86297-3453-4895-a5cf-5b465a8e8909
https://ora.ox.ac.uk/objects/uuid:31d86297-3453-4895-a5cf-5b465a8e8909
Akademický článek
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Autor:
A. Minko, V. Hoel, S. Lepilliet, G. Dambrine, J.C. DeJaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Publikováno v:
IEEE Electron Device Letters. 25:167-169
AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-/spl mu/m T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at V/sub GS/=1 V and V/sub DS/=10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe39fb56e19f6fd4b8d1dcbb1455834
https://doi.org/10.1109/led.2004.825208
https://doi.org/10.1109/led.2004.825208
Publikováno v:
AIP Conference Proceedings.
The effects of uniaxial stress and variable excitation on the optical properties of GaN/AlN quantum dots (QDs) grown on Si(111) substrates have been investigated. We show that post‐growth microcracks which are created during cooling of the sample s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2bd2450193a1eb4ed1030f00aadd328
https://doi.org/10.1063/1.3666449
https://doi.org/10.1063/1.3666449
Autor:
P. Etienne, J. Massies
Publikováno v:
Journal de Physique III. 3:1581-1588
It is shown that, apart from the standard criterion on the lattice matching of the two metals, other simple considerations can be used to select metal pairs suitable for the growth of high quality epitaxial metallic multilayers. Surface energy and su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9768d42bd177cc76e92c2422f8c881
https://doi.org/10.1051/jp3:1993221
https://doi.org/10.1051/jp3:1993221
Autor:
J. M. Moison, F. Houzay, B. Jusserand, J. Massies, F. Barthe, Jean-Michel Gérard, F.S. Turco-Sandroff
Publikováno v:
Journal of Crystal Growth. 111:141-150
Recent measurements which demonstrate the occurrence of surface segregation during the MBE growth of IIIaIIIb–V ternary semiconductor alloys and IIIa–V/IIIb–V heterostructures are reviewed. This preferential segregation drives to the surface on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd6168dedbf13958abc45f7080ddf6c
https://doi.org/10.1016/0022-0248(91)90962-5
https://doi.org/10.1016/0022-0248(91)90962-5
Autor:
A. A. Mbaye, J. Massies
Publikováno v:
Europhysics Letters (EPL). 11:769-774
The dynamics towards a steady state of the local equilibrium morphology of the growth front surface in molecular beam epitaxy is studied via a new phenomenology. This approach is used to describe the evolution of the surface roughness and the damping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b57c7a8220605dcb32897f0851a85a
https://doi.org/10.1209/0295-5075/11/8/013
https://doi.org/10.1209/0295-5075/11/8/013
Autor:
M. Leroux, J. Massies
Publikováno v:
Journal of Luminescence. :355-357
The overall line shape of the luminescence spectra of (Al, Ga)Sb quantum well samples containing direct (Γ)- and indirect ( L )-gap wells is discussed using a simple model that takes into account interwell luminescence reabsorption. The radiative ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c525506021a8a204f8df4dc15c621b
https://doi.org/10.1016/s0022-2313(96)00297-9
https://doi.org/10.1016/s0022-2313(96)00297-9
Autor:
M. Leroux, J. Massies
Publikováno v:
Applied Physics Letters. 68:54-56
This letter reports the growth by molecular beam epitaxy of AlxGa1−xSb/GaSb single quantum wells on GaSb substrates. Barrier compositions and well thicknesses are determined in situ using reflection high energy electron diffraction. The luminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6b2397168fe7fbee53a806a2ec40ad
https://doi.org/10.1063/1.116755
https://doi.org/10.1063/1.116755