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pro vyhledávání: '"J. Martı´n-Martı´nez"'
Autor:
L. Aguilera, J. Martı´n-Martı´nez, M. Porti, R. Rodrı´guez, M. Cambrea, F. Crupi, M. Nafrı´a, X. Aymerich
Publikováno v:
Microelectronic Engineering. 84:2113-2116
In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPIC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74031d2d0558c28680a84a9a2af9dd9b
https://doi.org/10.1016/j.mee.2007.04.093
https://doi.org/10.1016/j.mee.2007.04.093
