Zobrazeno 1 - 10
of 94
pro vyhledávání: '"J. Markunas"'
Autor:
J. Markunas, S. B. Qadri, R. N. Jacobs, Nadeemullah A. Mahadik, Joseph G. Pellegrino, M. Jaime-Vasquez, M. Groenert, L. A. Almeida, C. Andrews
Publikováno v:
Journal of Crystal Growth. 310:2960-2965
We report on the significance of thermal expansion mismatch in the heteroepitaxial growth of CdTe on highly lattice-mismatched substrates. Such substrates including Si, Ge, or GaAs are desirable for CdTe buffer layer growth and subsequent deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114be6cc248b2b05db521f3c96c60f88
https://doi.org/10.1016/j.jcrysgro.2008.02.029
https://doi.org/10.1016/j.jcrysgro.2008.02.029
Autor:
Robert J. Markunas, D. P. Malta, G. C. Hudson, R. E. Thomas, T. P. Humphreys, R. A. Rudder, J. B. Posthill
Publikováno v:
Journal of Applied Physics. 79:2722-2727
By combining a low temperature (600 °C) chemical vapor deposition process for homoepitaxial diamond and conventional ion implantation, we have made and lifted off a synthetic diamond single crystal plate. Before growth, a type Ia C(100) crystal was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3b70d394437134211630c48dce2cbe
https://doi.org/10.1063/1.361144
https://doi.org/10.1063/1.361144
Publikováno v:
Surface Science Letters. 294:L945-L951
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e68a90f299a16756586d96c6144edf6d
https://doi.org/10.1016/0167-2584(93)91086-4
https://doi.org/10.1016/0167-2584(93)91086-4
Autor:
G. G. Fountain, G. Lucovsky, S. V. Hattangady, Randall Alley, Dorota Temple, Robert J. Markunas
Publikováno v:
Journal of Applied Physics. 73:7635-7642
Significant improvement in material and electrical properties of SiO2 films deposited by low‐temperature remote plasma‐enhanced chemical vapor deposition take place as the rf power to the plasma discharge is increased. The deposition rate increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074dca651d0427a078d9a7e1b47bca03
https://doi.org/10.1063/1.353961
https://doi.org/10.1063/1.353961
Publikováno v:
ChemInform. 23
In this paper, the effect of thin interfacial films of SiO[sub 2] ([approximately] 20 [Angstrom]) on the electrical characteristics of metal contacts fabricated on polycrystalline and homepitaxial diamond films is studied. The diamond films were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c1ef3f356f4c2a91e5f511a85231be
https://doi.org/10.1002/chin.199230252
https://doi.org/10.1002/chin.199230252
Publikováno v:
Surface Science Letters. 277:L95-L99
Ab initio valence orbital configuration interaction calculations are used to study the energy effect of Na, H and C atom subsurface species on CH 3 chemisorption at a hollow 3-fold site on Ni(111). The lattice is modeled as an embedded three layer cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c7f68c3161a5bd411baddb4f8268550
https://doi.org/10.1016/0167-2584(92)90140-z
https://doi.org/10.1016/0167-2584(92)90140-z
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:817-822
A hydrogen plasma‐based technique for carbon removal has been combined with a modest anneal for oxide desorption at 720 °C to produce atomically clean Si(100)2×1 surfaces. Carbon and oxygen contamination can be removed from silicon surfaces by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50327ca74dab44e47ec4e5942f19228d
https://doi.org/10.1116/1.577678
https://doi.org/10.1116/1.577678
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2451-2457
Low energy electron diffraction (LEED) has been used to study the effects of atomic and molecular species of hydrogen and oxygen on the reconstructed C(100)‐(2×1) surface. Thermal desorption spectroscopy was also used to study desorption products
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70afb34f80935ba4ba0234dd8e32e5ed
https://doi.org/10.1116/1.577983
https://doi.org/10.1116/1.577983
Publikováno v:
Journal of The Electrochemical Society. 139:1445-1449
In this paper, the effect of thin interfacial films of SiO[sub 2] ([approximately] 20 [Angstrom]) on the electrical characteristics of metal contacts fabricated on polycrystalline and homepitaxial diamond films is studied. The diamond films were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76db78748e95e41e2bc20a0b04bd22d8
https://doi.org/10.1149/1.2069428
https://doi.org/10.1149/1.2069428
Publikováno v:
Journal of Applied Physics. 71:3842-3852
Recent studies [Hattangady et al., Appl. Phys. Lett. 57, 581 (1990)] have shown greatly reduced interface state densities (5×1010 cm−2 eV−1) in Ge‐based, metal‐insulator‐semiconductor structures with the use of an ultrathin, pseudomorphic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6ea975cc5b7443a7cb3100cae6520b
https://doi.org/10.1063/1.350874
https://doi.org/10.1063/1.350874